Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Article
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Overview of emerging nonvolatile memory technologiesNanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526 [Peer Reviewed Journal]Meena et al.; licensee Springer. 2014. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. ;The Author(s) 2014 ;Copyright © 2014 Meena et al.; licensee Springer. 2014 Meena et al.; licensee Springer. ;ISSN: 1931-7573 ;ISSN: 1556-276X ;EISSN: 1556-276X ;DOI: 10.1186/1556-276X-9-526 ;PMID: 25278820Full text available |
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2 |
Material Type: Article
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Effects of O sub(2) plasma treatment on the electric and dielectric characteristics of Ba sub(0.7)Sr sub(0.3)TiO sub(3) thin filmsMicroelectronics and reliability, 2000-01, Vol.40 (4), p.679-682 [Peer Reviewed Journal]ISSN: 0026-2714 ;EISSN: 1872-941XFull text available |
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3 |
Material Type: Article
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Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin filmsMicroelectronics and reliability, 2000-04, Vol.40 (4-5), p.679-682 [Peer Reviewed Journal]2000 Elsevier Science Ltd ;ISSN: 0026-2714 ;EISSN: 1872-941X ;DOI: 10.1016/S0026-2714(99)00321-2Full text available |
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4 |
Material Type: Book Chapter
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MOSFETsGuide to State-of-the-Art Electron Devices, 2013, p.21-362013 Opt Out ;Copyright © 2013 John Wiley & Sons, Ltd ;ISBN: 9781118347263 ;ISBN: 1118347269 ;EISBN: 1118517512 ;EISBN: 9781118517543 ;EISBN: 1118517539 ;EISBN: 9781118517512 ;EISBN: 9781118517536 ;EISBN: 1118517547 ;DOI: 10.1002/9781118517543.ch2Full text available |
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5 |
Material Type: Patent
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SEMICONDUCTOR-ON-INSULATOR FABRICATION METHODDigital Resources/Online E-Resources |
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6 |
Material Type: Patent
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Semiconductor-on-insulator fabrication methodDigital Resources/Online E-Resources |
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7 |
Material Type: Patent
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SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICES AND SOI IC FABRICATION METHODDigital Resources/Online E-Resources |
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8 |
Material Type: Patent
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Semiconductor signal translating devicesDigital Resources/Online E-Resources |
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9 |
Material Type: Patent
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TRANSISTOR A EFFETTO DI CAMPO A CANALE CORTODigital Resources/Online E-Resources |
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10 |
Material Type: Patent
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SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICES AND SOI IC FABRICATION METHODDigital Resources/Online E-Resources |
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11 |
Material Type: Patent
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SEMICONDUCTOR-ON-INSULATOR (SOI) DEVICES AND SOI IC FABRICATION METHODDigital Resources/Online E-Resources |
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12 |
Material Type: Patent
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KURZKANAL-FELDEFFEKTTRANSISTORDigital Resources/Online E-Resources |
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13 |
Material Type: Patent
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ELECTRIC CIRCUITS INCLUDING SEMICONDUCTOR NEGATIVE RESISTANCE DIODESDigital Resources/Online E-Resources |
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14 |
Material Type: Patent
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NEGATIVE RESISTANCE DIODE CIRCUITSDigital Resources/Online E-Resources |
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15 |
Material Type: Patent
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SCHOTTKY BARRIER TRANSIT TIME NEGATIVE RESISTANCE DIODE CIRCUITSDigital Resources/Online E-Resources |
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16 |
Material Type: Patent
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INTEGRATED CIRCUIT CHIP ASSEMBLYDigital Resources/Online E-Resources |
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17 |
Material Type: Patent
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Integrated circuit chip assemblyDigital Resources/Online E-Resources |
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18 |
Material Type: Patent
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INTEGRATED CIRCUIT CHIP ASSEMBLYDigital Resources/Online E-Resources |
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19 |
Material Type: Patent
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PROCEDE DE FABRICATION DE TRANSISTORS A EFFET DE CHAMP A CANAL COURTDigital Resources/Online E-Resources |
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20 |
Material Type: Patent
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SCHOTTKY BARRIER DIODE CONTACTSDigital Resources/Online E-Resources |