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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Applied physics letters, 2017-08, Vol.111 (9) [Peer Reviewed Journal]

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Title:
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Author: Zhou, Hong ; Maize, Kerry ; Qiu, Gang ; Shakouri, Ali ; Ye, Peide D.
Subjects: Depletion ; Field effect transistors ; Gallium oxides ; Heating ; High temperature effects ; Image resolution ; Reflectance ; Semiconductor devices ; Silicon dioxide ; Thermal imaging ; Transistors
Is Part Of: Applied physics letters, 2017-08, Vol.111 (9)
Description: We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.
Publisher: Melville: American Institute of Physics
Language: English
Identifier: ISSN: 0003-6951
EISSN: 1077-3118
DOI: 10.1063/1.5000735
CODEN: APPLAB
Source: Alma/SFX Local Collection

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