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High performance broadband photodetector using fabricated nanowires of bismuth selenide

Scientific reports, 2016-01, Vol.6 (1), p.19138-19138, Article 19138 [Peer Reviewed Journal]

Copyright Nature Publishing Group Jan 2016 ;Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited ;ISSN: 2045-2322 ;EISSN: 2045-2322 ;DOI: 10.1038/srep19138 ;PMID: 26751499

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  • Title:
    High performance broadband photodetector using fabricated nanowires of bismuth selenide
  • Author: Sharma, Alka ; Bhattacharyya, Biplab ; Srivastava, A K ; Senguttuvan, T D ; Husale, Sudhir
  • Subjects: Illumination ; Ion beams ; Nanotechnology ; Polarization ; Selenide
  • Is Part Of: Scientific reports, 2016-01, Vol.6 (1), p.19138-19138, Article 19138
  • Description: Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.
  • Publisher: England: Nature Publishing Group
  • Language: English
  • Identifier: ISSN: 2045-2322
    EISSN: 2045-2322
    DOI: 10.1038/srep19138
    PMID: 26751499
  • Source: PubMed Central
    ProQuest Central
    DOAJ Directory of Open Access Journals
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