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1
{0 0 1}-Facet-Exposed Ag4V2O7 Nanoplates: Additive-Free Hydrothermal Synthesis and Enhanced Photocatalytic Activity
{0 0 1}-Facet-Exposed Ag4V2O7 Nanoplates: Additive-Free Hydrothermal Synthesis and Enhanced Photocatalytic Activity
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{0 0 1}-Facet-Exposed Ag4V2O7 Nanoplates: Additive-Free Hydrothermal Synthesis and Enhanced Photocatalytic Activity

Journal of nanomaterials, 2018-01, Vol.2018 [Peer Reviewed Journal]

Copyright © 2018 Nguyen Duc Van and Ngo Thi Hong Le. ;Copyright © 2018 Nguyen Duc Van and Ngo Thi Hong Le. This is an open access article distributed under the Creative Commons Attribution License (the “License”), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. http://creativecommons.org/licenses/by/4.0 ;ISSN: 1687-4110 ;EISSN: 1687-4129 ;DOI: 10.1155/2018/8462764

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2
(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness
(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness

Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Peer Reviewed Journal]

The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 ;The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. ;ISSN: 0957-4522 ;EISSN: 1573-482X ;DOI: 10.1007/s10854-022-07905-7

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3
(001)-oriented PbTiO3 ferroelectric thin films grown on Si by metal-organic chemical vapour deposition
(001)-oriented PbTiO3 ferroelectric thin films grown on Si by metal-organic chemical vapour deposition
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(001)-oriented PbTiO3 ferroelectric thin films grown on Si by metal-organic chemical vapour deposition

Journal of physics. Condensed matter, 1995-11, Vol.7 (47), p.9075-9080 [Peer Reviewed Journal]

1996 INIST-CNRS ;ISSN: 0953-8984 ;EISSN: 1361-648X ;DOI: 10.1088/0953-8984/7/47/023 ;CODEN: JCOMEL

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4
(001)-textured growth of diamond films on polycrystalline diamond substrates by bias-assisted chemical vapor deposition
(001)-textured growth of diamond films on polycrystalline diamond substrates by bias-assisted chemical vapor deposition
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(001)-textured growth of diamond films on polycrystalline diamond substrates by bias-assisted chemical vapor deposition

Journal of crystal growth, 1997-02, Vol.171 (3), p.485-492 [Peer Reviewed Journal]

1997 ;1997 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(96)00701-4 ;CODEN: JCRGAE

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5
(001) textured L 1 0 -FePt pseudo spin valve with TiN spacer
(001) textured L 1 0 -FePt pseudo spin valve with TiN spacer
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(001) textured L 1 0 -FePt pseudo spin valve with TiN spacer

Applied physics letters, 2011-12, Vol.99 (25), p.252503-252503-4 [Peer Reviewed Journal]

2011 American Institute of Physics ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.3671988 ;CODEN: APPLAB

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6
001 ⟩ textured ( K 0.5 Na 0.5 ) ( Nb 0.97 Sb 0.03 ) O 3 piezoelectric ceramics with high electromechanical coupling over a broad temperature range
001 ⟩ textured ( K 0.5 Na 0.5 ) ( Nb 0.97 Sb 0.03 ) O 3 piezoelectric ceramics with high electromechanical coupling over a broad temperature range
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001 ⟩ textured ( K 0.5 Na 0.5 ) ( Nb 0.97 Sb 0.03 ) O 3 piezoelectric ceramics with high electromechanical coupling over a broad temperature range

Applied physics letters, 2009-12, Vol.95 (23), p.232905-232905-3 [Peer Reviewed Journal]

2009 American Institute of Physics ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.3271682 ;CODEN: APPLAB

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7
0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscope
0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscope
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0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscope

Journal of physics. E, Scientific instruments, 1986-12, Vol.19 (12), p.1025-1026

1987 INIST-CNRS ;ISSN: 0022-3735 ;DOI: 10.1088/0022-3735/19/12/007 ;CODEN: JPSIAE

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8
010Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)
010Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)
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010Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)

Wound repair and regeneration, 2004-04, Vol.12 (2), p.A5-A5 [Peer Reviewed Journal]

ISSN: 1067-1927 ;EISSN: 1524-475X ;DOI: 10.1111/j.1067-1927.2004.0abstractk.x

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9
010
Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)
010
Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)
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010
Structural Characterization of Small Intestinal Submucosa (SIS) using Cryo and Traditional Scanning Electron Microscopy (SEM)

Wound repair and regeneration, 2004-04, Vol.12 (2), p.A5-A5 [Peer Reviewed Journal]

ISSN: 1067-1927 ;EISSN: 1524-475X ;DOI: 10.1111/j.1067-1927.2004.0abstractk.x

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10
< 012 > -oriented growth of the films LaNiO sub(3)/SiO sub(2)/Si(111) by pulsed laser deposition
< 012 > -oriented growth of the films LaNiO sub(3)/SiO sub(2)/Si(111) by pulsed laser deposition
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< 012 > -oriented growth of the films LaNiO sub(3)/SiO sub(2)/Si(111) by pulsed laser deposition

Journal of materials science, 1998-12, Vol.33 (23), p.5631-5635 [Peer Reviewed Journal]

ISSN: 0022-2461 ;EISSN: 1573-4803

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11
(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition Technique
(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition Technique
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(012) Textured LiNbO3 Waveguiding Films Grown on SiO2 by Pulsed Laser Deposition Technique

Physica status solidi. A, Applied research, 1996-04, Vol.154 (2), p.615-622

Copyright © 1996 WILEY‐VCH Verlag GmbH & Co. KGaA ;1996 INIST-CNRS ;ISSN: 0031-8965 ;EISSN: 1521-396X ;DOI: 10.1002/pssa.2211540215 ;CODEN: PSSABA

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12
012&#9002;-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition
012&#9002;-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition
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012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition

Journal of materials science, 1998-12, Vol.33 (23), p.5631-5635 [Peer Reviewed Journal]

Journal of Materials Science is a copyright of Springer, (1998). All Rights Reserved. ;ISSN: 0022-2461 ;EISSN: 1573-4803 ;DOI: 10.1023/A:1004424517453

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13
021 "Epithelization Unit": A New Concept in Skin Wound Healing
021 "Epithelization Unit": A New Concept in Skin Wound Healing
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021 "Epithelization Unit": A New Concept in Skin Wound Healing

Wound repair and regeneration, 2004-01, Vol.12 (1), p.A10-A10 [Peer Reviewed Journal]

ISSN: 1067-1927 ;EISSN: 1524-475X ;DOI: 10.1111/j.1067-1927.2004.abstractak.x

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14
0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis
0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis
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0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis

Physics of plasmas, 2012-09, Vol.19 (9) [Peer Reviewed Journal]

ISSN: 1070-664X ;EISSN: 1089-7674 ;DOI: 10.1063/1.4750048

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15
0.3 &#956;m contact layer: process characterisation
0.3 &#956;m contact layer: process characterisation
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0.3 μm contact layer: process characterisation

Microelectronic engineering, 1999, Vol.46 (1), p.89-92 [Peer Reviewed Journal]

1999 Elsevier Science B.V. All rights reserved ;1999 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(99)00022-2 ;CODEN: MIENEF

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16
0.35 &#956;m pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigma
0.35 &#956;m pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigma
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0.35 μm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigma

Microelectronic engineering, 1995-02, Vol.27 (1), p.275-278 [Peer Reviewed Journal]

1995 Elsevier Science B.V. All rights reserved ;1995 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(94)00106-5 ;CODEN: MIENEF

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17
0362&#8197;Risk of pleural mm and residual asbestos burden in the lung: a retrospective case-control study
0362&#8197;Risk of pleural mm and residual asbestos burden in the lung: a retrospective case-control study
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0362 Risk of pleural mm and residual asbestos burden in the lung: a retrospective case-control study

Occupational and environmental medicine (London, England), 2017-08, Vol.74 (Suppl 1), p.A113 [Peer Reviewed Journal]

2017, Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions ;Copyright: 2017 © 2017, Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions ;ISSN: 1351-0711 ;EISSN: 1470-7926 ;DOI: 10.1136/oemed-2017-104636.297

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18
0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La Doping
0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La Doping
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0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La Doping

Journal of electronic materials, 2020-10, Vol.49 (10), p.6080-6086 [Peer Reviewed Journal]

The Minerals, Metals & Materials Society 2020 ;The Minerals, Metals & Materials Society 2020. ;ISSN: 0361-5235 ;EISSN: 1543-186X ;DOI: 10.1007/s11664-020-08348-8

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19
0.40% Bipolar Strain in Lead Free BNT-KNN System Modified with Li, Ta and Sb
0.40% Bipolar Strain in Lead Free BNT-KNN System Modified with Li, Ta and Sb
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0.40% Bipolar Strain in Lead Free BNT-KNN System Modified with Li, Ta and Sb

Journal of the American Ceramic Society, 2013-02, Vol.96 (2), p.509-512 [Peer Reviewed Journal]

2012 The American Ceramic Society ;Copyright American Ceramic Society Feb 2013 ;ISSN: 0002-7820 ;EISSN: 1551-2916 ;DOI: 10.1111/jace.12054 ;CODEN: JACTAW

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20
(040)-Crystal Facet Engineering of BiVO4 Plate Photoanodes for Solar Fuel Production
(040)-Crystal Facet Engineering of BiVO4 Plate Photoanodes for Solar Fuel Production
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(040)-Crystal Facet Engineering of BiVO4 Plate Photoanodes for Solar Fuel Production

Advanced energy materials, 2016-02, Vol.6 (4), p.n/a [Peer Reviewed Journal]

2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ;ISSN: 1614-6832 ;EISSN: 1614-6840 ;DOI: 10.1002/aenm.201501754

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