Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Article
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0-10 KM TEMPERATURE AND HUMIDITY PROFILES RETRIEVAL FROM GROUND-BASED MICROWAVE RADIOMETERJournal of Tropical Meteorology, 2018-06, Vol.24 (2), p.243-252 [Peer Reviewed Journal]Copyright Guangzhou Institute of Tropical & Marine Meteorology Jun 2018 ;ISSN: 1006-8775 ;DOI: 10.16555/j.1006-8775.2018.02.012Full text available |
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2 |
Material Type: Article
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.0992 ;CODEN: ELLEAKFull text available |
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3 |
Material Type: Article
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0.0012 mm^sup 2^, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateElectronics letters, 2013-05, Vol.49 (11), p.1 [Peer Reviewed Journal]Copyright The Institution of Engineering & Technology May 23, 2013 ;ISSN: 0013-5194 ;EISSN: 1350-911X ;CODEN: ELLEAKFull text available |
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4 |
Material Type: Article
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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiencyElectronics letters, 2013-10, Vol.49 (21), p.1340-1342 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.2670 ;CODEN: ELLEAKFull text available |
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5 |
Material Type: Article
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0.04 degree-per-hour MEMS disk resonator gyroscope with high-quality factor (510 k) and long decaying time constant (74.9 s)Microsystems & nanoengineering, 2018-11, Vol.4 (1), p.32-11, Article 32 [Peer Reviewed Journal]2018. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;The Author(s) 2018 ;ISSN: 2055-7434 ;ISSN: 2096-1030 ;EISSN: 2055-7434 ;DOI: 10.1038/s41378-018-0035-0 ;PMID: 31057920Full text available |
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6 |
Material Type: Article
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0.08 fF, 0.72 nA dark current, 91% Quantum Efficiency, 38 Gb/s Nano-photodetector on a 45 nm CMOS Silicon-Photonic Platformhttp://creativecommons.org/licenses/by/4.0 ;DOI: 10.48550/arxiv.2401.03527Digital Resources/Online E-Resources |
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7 |
Material Type: Article
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0.1 µM PHEMT PROCESS FOR E-BAND POWER APPLICATIONSMicrowave Journal, 2010-12, Vol.53 (12), p.36Copyright Horizon House Publications, Inc. Dec 2010 ;ISSN: 0192-6225 ;CODEN: MJIEEFFull text available |
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8 |
Material Type: Article
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0.1 to 20 GHz, Fast-Tuning, Miniature SynthesizerMicrowave Journal, 2018-06, p.47-47Copyright Horizon House Publications, Inc. Jun 2018 ;ISSN: 0192-6225Full text available |
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9 |
Material Type: Article
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0.1 to 6 GHz GaN Amplifiers Redefine SWaPMicrowave Journal, 2016-05, p.60Copyright Horizon House Publications, Inc. May 2016 ;ISSN: 0192-6225 ;CODEN: MJIEEFFull text available |
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10 |
Material Type: Article
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0.1-μm high performance double heterojunction In 0.32Al 0.68As/In 0.33Ga 0.67As metamorphic HEMTs on GaAsSolid-state electronics, 2000, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]2000 ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5Full text available |
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11 |
Material Type: Patent
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0~10V voltage signal line sex reversal is to circuit of 4~20mA current signalDigital Resources/Online E-Resources |
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12 |
Material Type: Article
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal]2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133Full text available |
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13 |
Material Type: Article
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0.18 µm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7±17.4 ps group-delayElectronics letters, 2007-11, Vol.43 (24), p.1 [Peer Reviewed Journal]Copyright The Institution of Engineering & Technology Nov 22, 2007 ;ISSN: 0013-5194 ;EISSN: 1350-911X ;CODEN: ELLEAKFull text available |
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14 |
Material Type: Article
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0.18 µm CMOS integrated circuit design for impedance-based structural health monitoringIET circuits, devices & systems, 2010-05, Vol.4 (3), p.227 [Peer Reviewed Journal]Copyright The Institution of Engineering & Technology May 2010 ;ISSN: 1751-858X ;EISSN: 1751-8598Full text available |
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15 |
Material Type: Article
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0.18 mm 21-27 GHz CMOS UWB LNA with 9.3±1.3 dB gain and 103.9±8.1 ps group delayElectronics letters, 2008-08, Vol.44 (17), p.1 [Peer Reviewed Journal]Copyright The Institution of Engineering & Technology Aug 14, 2008 ;ISSN: 0013-5194 ;EISSN: 1350-911X ;CODEN: ELLEAKFull text available |
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16 |
Material Type: Article
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A 0.0016 mm² 0.64 nJ leakage-based CMOS temperature sensorSensors (Basel, Switzerland), 2013-09, Vol.13 (9), p.12648-12662 [Peer Reviewed Journal]Copyright MDPI AG 2013 ;2013 by the authors; licensee MDPI, Basel, Switzerland. 2013 ;ISSN: 1424-8220 ;EISSN: 1424-8220 ;DOI: 10.3390/s130912648 ;PMID: 24051526Full text available |
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17 |
Material Type: Article
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A 0.0018 mm2 frequency-to-digital-converter-based CMOS smart temperature sensorAnalog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2009 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-009-9434-3Full text available |
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18 |
Material Type: Article
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A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)IET circuits, devices & systems, 2021-11, Vol.15 (8), p.738-744 [Peer Reviewed Journal]2021 The Authors. published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. ;ISSN: 1751-858X ;EISSN: 1751-8598 ;DOI: 10.1049/cds2.12068Full text available |
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19 |
Material Type: Article
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A 0.003-mm2, 0.35-V, 82-pJ/conversion ultra-low power CMOS all digital temperature sensor for on-die thermal managementAnalog integrated circuits and signal processing, 2013-04, Vol.75 (1), p.147-156 [Peer Reviewed Journal]Springer Science+Business Media New York 2012 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-012-9988-3Full text available |
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20 |
Material Type: Article
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A 0.01° Resolving TRMM PR Precipitation ClimatologyJournal of applied meteorology and climatology, 2018-08, Vol.57 (8), p.1645-1661 [Peer Reviewed Journal]2018 American Meteorological Society ;Copyright American Meteorological Society Aug 2018 ;ISSN: 1558-8424 ;EISSN: 1558-8432 ;DOI: 10.1175/jamc-d-17-0280.1Full text available |