Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Article
|
(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDJournal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAEFull text available |
|
2 |
Material Type: Article
|
(0 0 1) V surface structures analysed by RHEED and STMSurface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCASFull text available |
|
3 |
Material Type: Article
|
0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in HeliumEurophysics letters, 1990-01, Vol.11 (1), p.25-30 [Peer Reviewed Journal]ISSN: 0295-5075 ;EISSN: 1286-4854 ;DOI: 10.1209/0295-5075/11/1/005Full text available |
|
4 |
Material Type: Article
|
0-0 Energies Using Hybrid Schemes: Benchmarks of TD-DFT, CIS(D), ADC(2), CC2, and BSE/GW formalisms for 80 Real-Life CompoundsJournal of chemical theory and computation, 2015-11, Vol.11 (11), p.5340-5359 [Peer Reviewed Journal]Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 1549-9618 ;EISSN: 1549-9626 ;DOI: 10.1021/acs.jctc.5b00619Digital Resources/Online E-Resources |
|
5 |
Material Type: Article
|
0 + → 0 − pion-like excitations in light and medium nucleiPhysics letters. B, 1985-01, Vol.164 (4), p.253-257 [Peer Reviewed Journal]1985 ;ISSN: 0370-2693 ;EISSN: 1873-2445 ;DOI: 10.1016/0370-2693(85)90320-XFull text available |
|
6 |
Material Type: Article
|
0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation MonitoringJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.6.920Full text available |
|
7 |
Material Type: Article
|
0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layersSolid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal]1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4Full text available |
|
8 |
Material Type: Article
|
0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr CombsIEEE photonics journal, 2016-04, Vol.8 (2), p.1-7 [Peer Reviewed Journal]Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 ;ISSN: 1943-0655 ;EISSN: 1943-0655 ;DOI: 10.1109/JPHOT.2016.2538088 ;CODEN: PJHOC3Full text available |
|
9 |
Material Type: Article
|
0.1–10 keV soft X-ray beamline for surface EXAFS studies at the Daresbury SRSNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1986-05, Vol.246 (1), p.131-133 [Peer Reviewed Journal]1986 ;ISSN: 0168-9002 ;EISSN: 1872-9576 ;DOI: 10.1016/0168-9002(86)90059-8Full text available |
|
10 |
Material Type: Article
|
0.1 eV HgCdTe photoconductive detector performanceInfrared physics, 1977-01, Vol.17 (2), p.127-1351977 ;ISSN: 0020-0891 ;DOI: 10.1016/0020-0891(77)90105-1Full text available |
|
11 |
Material Type: Article
|
0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEFFull text available |
|
12 |
Material Type: Article
|
0.1 nm information limit with the CM30FEG-special TübingenUltramicroscopy, 1993, Vol.52 (3), p.575-580 [Peer Reviewed Journal]1993 ;1994 INIST-CNRS ;ISSN: 0304-3991 ;EISSN: 1879-2723 ;DOI: 10.1016/0304-3991(93)90076-A ;CODEN: ULTRD6Full text available |
|
13 |
Material Type: Article
|
0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5Full text available |
|
14 |
Material Type: Article
|
0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Peer Reviewed Journal]1996 INIST-CNRS ;ISSN: 0040-6090 ;EISSN: 1879-2731 ;DOI: 10.1016/0040-6090(95)06838-4 ;CODEN: THSFAPFull text available |
|
15 |
Material Type: Article
|
0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter AccumulationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.3.411Full text available |
|
16 |
Material Type: Article
|
0.12 μm optical lithography performances using an alternating DUV phase shift maskMicroelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal]1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEFFull text available |
|
17 |
Material Type: Article
|
0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal]2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133Full text available |
|
18 |
Material Type: Article
|
(0,2) deformations of linear sigma modelsThe journal of high energy physics, 2011-07, Vol.2011 (7), Article 44 [Peer Reviewed Journal]SISSA, Trieste, Italy 2011 ;SISSA, Trieste, Italy 2011. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP07(2011)044Full text available |
|
19 |
Material Type: Article
|
(0,2) dualities and the 4-simplexThe journal of high energy physics, 2019-08, Vol.2019 (8), p.1-49, Article 132 [Peer Reviewed Journal]The Author(s) 2019 ;Journal of High Energy Physics is a copyright of Springer, (2019). All Rights Reserved. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP08(2019)132Full text available |
|
20 |
Material Type: Article
|
A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOSElectronics (Basel), 2022-06, Vol.11 (11) [Peer Reviewed Journal]COPYRIGHT 2022 MDPI AG ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics11111707Full text available |