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1
(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD
(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD
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Article 		Add to My Research

(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD

Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Peer Reviewed Journal]

2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAE

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2
(0 0 1) V surface structures analysed by RHEED and STM
(0 0 1) V surface structures analysed by RHEED and STM
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(0 0 1) V surface structures analysed by RHEED and STM

Surface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal]

2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCAS

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3
0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium
0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium
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Article 		Add to My Research

0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium

Europhysics letters, 1990-01, Vol.11 (1), p.25-30 [Peer Reviewed Journal]

ISSN: 0295-5075 ;EISSN: 1286-4854 ;DOI: 10.1209/0295-5075/11/1/005

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4
(0, ±1) ideal matrices
(0, ±1) ideal matrices
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(0, ±1) ideal matrices

Mathematical programming, 1998-02, Vol.80 (3), p.265-281 [Peer Reviewed Journal]

1998 INIST-CNRS ;ISSN: 0025-5610 ;EISSN: 1436-4646 ;DOI: 10.1007/BF01581169 ;CODEN: MHPGA4

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5
0–1 laws by preservation
0–1 laws by preservation
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0–1 laws by preservation

Theoretical computer science, 1997-09, Vol.184 (1), p.237-245 [Peer Reviewed Journal]

1997 ;ISSN: 0304-3975 ;EISSN: 1879-2294 ;DOI: 10.1016/S0304-3975(97)00086-8

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6
0–1 Laws for Fragments of Existential Second-Order Logic: A Survey
0–1 Laws for Fragments of Existential Second-Order Logic: A Survey
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Conference Proceeding 		Add to My Research

0–1 Laws for Fragments of Existential Second-Order Logic: A Survey

Lecture notes in computer science, 2000, p.84-98 [Peer Reviewed Journal]

Springer-Verlag Berlin Heidelberg 2000 ;2000 INIST-CNRS ;ISSN: 0302-9743 ;ISBN: 3540679014 ;ISBN: 9783540679011 ;EISSN: 1611-3349 ;EISBN: 9783540446125 ;EISBN: 3540446125 ;DOI: 10.1007/3-540-44612-5_6

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7
0-1 laws for maps
0-1 laws for maps
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0-1 laws for maps

Random structures & algorithms, 1999-05, Vol.14 (3), p.215-237 [Peer Reviewed Journal]

Copyright © 1999 John Wiley & Sons, Inc. ;ISSN: 1042-9832 ;EISSN: 1098-2418 ;DOI: 10.1002/(SICI)1098-2418(199905)14:3<215::AID-RSA2>3.0.CO;2-K

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8
0-1 laws for recursive structures
0-1 laws for recursive structures
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0-1 laws for recursive structures

Archive for mathematical logic, 1999-05, Vol.38 (4-5), p.205-215 [Peer Reviewed Journal]

ISSN: 0933-5846 ;EISSN: 1432-0665 ;DOI: 10.1007/s001530050125

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9
(0, &#189;, 1) matrices which are extreme points of the generalized transitive tournament polytope
(0, &#189;, 1) matrices which are extreme points of the generalized transitive tournament polytope
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(0, ½, 1) matrices which are extreme points of the generalized transitive tournament polytope

Linear algebra and its applications, 1995-04, Vol.220, p.97-110 [Peer Reviewed Journal]

1995 Elsevier Science Inc. ;ISSN: 0024-3795 ;EISSN: 1873-1856 ;DOI: 10.1016/0024-3795(93)00312-N

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10
0.006 says it all
0.006 says it all
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0.006 says it all

British dental journal, 2002-07, Vol.193 (1), p.56-56 [Peer Reviewed Journal]

Copyright Nature Publishing Group Jul 13, 2002 ;ISSN: 0007-0610 ;EISSN: 1476-5373 ;DOI: 10.1038/sj.bdj.4801484 ;PMID: 12171209

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11
0.01% Becaplermin Gel for the Treatment of a Chronic Orbital Ulcer After Exenteration
0.01% Becaplermin Gel for the Treatment of a Chronic Orbital Ulcer After Exenteration
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0.01% Becaplermin Gel for the Treatment of a Chronic Orbital Ulcer After Exenteration

Archives of ophthalmology (1960), 2001-12, Vol.119 (12), p.1858-1859

Copyright American Medical Association Dec 2001 ;ISSN: 0003-9950 ;EISSN: 1538-3601

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12
0.065 &#956;m gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
0.065 &#956;m gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal]

1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4

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13
0.1%/0.2% commercial chlorhexidine solutions as subgingival irrigants in chronic periodontitis
0.1%/0.2% commercial chlorhexidine solutions as subgingival irrigants in chronic periodontitis
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0.1%/0.2% commercial chlorhexidine solutions as subgingival irrigants in chronic periodontitis

Journal of clinical periodontology, 1996-04, Vol.23 (4), p.320-325 [Peer Reviewed Journal]

ISSN: 0303-6979 ;EISSN: 1600-051X ;DOI: 10.1111/j.1600-051X.1996.tb00552.x ;PMID: 8739162

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14
0.1&#8211;42&#8197;GHz InP DHBT distributed amplifiers with 35&#8197;dB gain and 15&#8197;dBm output
0.1&#8211;42&#8197;GHz InP DHBT distributed amplifiers with 35&#8197;dB gain and 15&#8197;dBm output
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Article 		Add to My Research

0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

Electronics letters, 2003-11, Vol.39 (22), p.1594 [Peer Reviewed Journal]

ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20031020

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15
(0,1)-Matrices with No Half&#8211;Half Submatrix of Ones
(0,1)-Matrices with No Half&#8211;Half Submatrix of Ones
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(0,1)-Matrices with No Half–Half Submatrix of Ones

European journal of combinatorics, 1997-10, Vol.18 (7), p.751-761 [Peer Reviewed Journal]

1997 Academic Press ;ISSN: 0195-6698 ;EISSN: 1095-9971 ;DOI: 10.1006/eujc.1996.0133

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16
0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithography

Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]

1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEF

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17
0.1-mm electrostatic microrelays switch at up to 100 GHz
0.1-mm electrostatic microrelays switch at up to 100 GHz
Material Type:
magazinearticle 		Add to My Research

0.1-mm electrostatic microrelays switch at up to 100 GHz

Electronic design, 1997-12, Vol.45 (27), p.34

Copyright Penton Publishing and Marketing Dec 1, 1997 ;ISSN: 0013-4872 ;EISSN: 1944-9550 ;CODEN: ELODAW

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18
0.1 nm information limit with the CM30FEG-special T&#252;bingen
0.1 nm information limit with the CM30FEG-special T&#252;bingen
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0.1 nm information limit with the CM30FEG-special Tübingen

Ultramicroscopy, 1993, Vol.52 (3), p.575-580 [Peer Reviewed Journal]

1993 ;1994 INIST-CNRS ;ISSN: 0304-3991 ;EISSN: 1879-2723 ;DOI: 10.1016/0304-3991(93)90076-A ;CODEN: ULTRD6

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19
0.1-&#956;m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
0.1-&#956;m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
Material Type:
Article 		Add to My Research

0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Solid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]

ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5

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20
0.1-&#956;m InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
0.1-&#956;m InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
Material Type:
Article 		Add to My Research

0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Peer Reviewed Journal]

Copyright © 1996 John Wiley & Sons, Inc. ;ISSN: 0895-2477 ;EISSN: 1098-2760 ;DOI: 10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M

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