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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Article
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0–360 Degrees angular measurements using spatial displacementApplied physics letters, 2023-03, Vol.122 (11) [Peer Reviewed Journal]Author(s) ;2023 Author(s). Published under an exclusive license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/5.0144731 ;CODEN: APPLABFull text available |
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0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation MonitoringJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.6.920Full text available |
| 3 |
Material Type: Article
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layersSolid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal]1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4Full text available |
| 4 |
Material Type: Article
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0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr CombsIEEE photonics journal, 2016-04, Vol.8 (2), p.1-7 [Peer Reviewed Journal]Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 ;ISSN: 1943-0655 ;EISSN: 1943-0655 ;DOI: 10.1109/JPHOT.2016.2538088 ;CODEN: PJHOC3Full text available |
| 5 |
Material Type: Article
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0.1 eV HgCdTe photoconductive detector performanceInfrared physics, 1977-01, Vol.17 (2), p.127-1351977 ;ISSN: 0020-0891 ;DOI: 10.1016/0020-0891(77)90105-1Full text available |
| 6 |
Material Type: Article
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0.1 ev HgCdTe photodetectorsInfrared physics, 1975-01, Vol.15 (2), p.111-1241975 ;ISSN: 0020-0891 ;DOI: 10.1016/0020-0891(75)90019-6Full text available |
| 7 |
Material Type: Article
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEFFull text available |
| 8 |
Material Type: Article
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAsSolid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5Full text available |
| 9 |
Material Type: Article
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Peer Reviewed Journal]1996 INIST-CNRS ;ISSN: 0040-6090 ;EISSN: 1879-2731 ;DOI: 10.1016/0040-6090(95)06838-4 ;CODEN: THSFAPFull text available |
| 10 |
Material Type: Article
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0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter AccumulationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.3.411Full text available |
| 11 |
Material Type: Article
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0.12 μm optical lithography performances using an alternating DUV phase shift maskMicroelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal]1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEFFull text available |
| 12 |
Material Type: Article
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal]2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133Full text available |
| 13 |
Material Type: Article
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0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxySolid-state electronics, 1999-04, Vol.43 (4), p.785-789 [Peer Reviewed Journal]ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(98)00305-0Full text available |
| 14 |
Material Type: Article
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2009 ;2015 INIST-CNRS ;Springer Science+Business Media, LLC 2010 ;ISSN: 0957-4522 ;EISSN: 1573-482X ;DOI: 10.1007/s10854-009-9968-2Full text available |
| 15 |
Material Type: Article
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0.3 V drive voltage GaAs∕AlGaAs substrate removed Mach–Zehnder intensity modulatorsApplied physics letters, 2008-05, Vol.92 (20) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.2931057Full text available |
| 16 |
Material Type: Article
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0.3 μm contact layer: process characterisationMicroelectronic engineering, 1999, Vol.46 (1), p.89-92 [Peer Reviewed Journal]1999 Elsevier Science B.V. All rights reserved ;1999 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(99)00022-2 ;CODEN: MIENEFFull text available |
| 17 |
Material Type: Article
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0.342 nW Class-AB enhanced flipped source follower low pass filter for biomedical applicationsReview of scientific instruments, 2022-11, Vol.93 (11), p.114709-114709 [Peer Reviewed Journal]Author(s) ;2022 Author(s). Published under an exclusive license by AIP Publishing. ;ISSN: 0034-6748 ;EISSN: 1089-7623 ;DOI: 10.1063/5.0108207 ;PMID: 36461428 ;CODEN: RSINAKFull text available |
| 18 |
Material Type: Article
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0.35 μm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigmaMicroelectronic engineering, 1995-02, Vol.27 (1), p.275-278 [Peer Reviewed Journal]1995 Elsevier Science B.V. All rights reserved ;1995 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(94)00106-5 ;CODEN: MIENEFFull text available |
| 19 |
Material Type: Article
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0.4% Electrostrain at Low Field in Lead-Free Bi-Based Relaxor Piezoceramics by La DopingJournal of electronic materials, 2020-10, Vol.49 (10), p.6080-6086 [Peer Reviewed Journal]The Minerals, Metals & Materials Society 2020 ;The Minerals, Metals & Materials Society 2020. ;ISSN: 0361-5235 ;EISSN: 1543-186X ;DOI: 10.1007/s11664-020-08348-8Full text available |
| 20 |
Material Type: Article
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0.4 J/10 ns/10 kHz-4 kW coherent beam combined laser using stimulated Brillouin scattering phase conjugation mirrors for industrial applicationsPhysica status solidi. C, 2013-06, Vol.10 (6), p.962-966 [Peer Reviewed Journal]Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim ;Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ;ISSN: 1862-6351 ;EISSN: 1610-1642 ;DOI: 10.1002/pssc.201300013Full text available |
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