Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Article
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0–30 V common mode range, 120 dB CMRR, and 10 nV/ noise floor current shunt monitor IC with an embedded ΣΔ modulated digital interfaceAnalog integrated circuits and signal processing, 2012, Vol.73 (1), p.339-351 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2011 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-011-9784-5Full text available |
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2 |
Material Type: Article
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessJournal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Peer Reviewed Journal]The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022 ;The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022. ;ISSN: 0957-4522 ;EISSN: 1573-482X ;DOI: 10.1007/s10854-022-07905-7Full text available |
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3 |
Material Type: Article
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line TerminationElectronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal]2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133Full text available |
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4 |
Material Type: Article
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0.25 μm 1.2 MHz BOOST-PFM-CONTINUOUS triple mode LED driver integrated in analog front end IC for portable applicationAnalog integrated circuits and signal processing, 2012-09, Vol.72 (3), p.595-603 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2011 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-011-9680-zFull text available |
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5 |
Material Type: Article
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0.4-V, 81.3-nA Bulk-Driven Single-Stage CMOS OTA with Enhanced TransconductanceElectronics (Basel), 2022-08, Vol.11 (17), p.2704 [Peer Reviewed Journal]COPYRIGHT 2022 MDPI AG ;2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics11172704Full text available |
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6 |
Material Type: Article
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0.4-V Bulk-Driven Operational Amplifier with Improved Input StageCircuits, systems, and signal processing, 2015-04, Vol.34 (4), p.1167-1185 [Peer Reviewed Journal]Springer Science+Business Media New York 2014 ;Springer Science+Business Media New York 2015 ;ISSN: 0278-081X ;EISSN: 1531-5878 ;DOI: 10.1007/s00034-014-9906-2Full text available |
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7 |
Material Type: Article
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0.5-V bulk-driven CMOS operational amplifierIET circuits, devices & systems, 2013-11, Vol.7 (6), p.352-360 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2015 INIST-CNRS ;Copyright The Institution of Engineering & Technology Nov 2013 ;ISSN: 1751-858X ;EISSN: 1751-8598 ;DOI: 10.1049/iet-cds.2012.0372Full text available |
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8 |
Material Type: Article
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0.5-V Nano-Power Shadow Sinusoidal Oscillator Using Bulk-Driven Multiple-Input Operational Transconductance AmplifierSensors (Basel, Switzerland), 2023-02, Vol.23 (4), p.2146 [Peer Reviewed Journal]COPYRIGHT 2023 MDPI AG ;2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;2023 by the authors. 2023 ;ISSN: 1424-8220 ;EISSN: 1424-8220 ;DOI: 10.3390/s23042146 ;PMID: 36850747Full text available |
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9 |
Material Type: Article
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0.7–1.8 GHz multiband digital polar transmitter using watt-class current-mode class-D CMOS power amplifier and digital envelope modulation technique for reduced spurious emissionsInternational journal of microwave and wireless technologies, 2013-06, Vol.5 (3), p.271-284 [Peer Reviewed Journal]Copyright © Cambridge University Press and the European Microwave Association 2013 ;ISSN: 1759-0787 ;EISSN: 1759-0795 ;DOI: 10.1017/S175907871300041XFull text available |
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10 |
Material Type: magazinearticle
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07 EGB Conference DeliversHeating/Piping/Air Conditioning Engineering : HPAC, 2007-11, Vol.79 (11), p.10Copyright Penton Media, Inc. Nov 2007 ;ISSN: 1527-4055 ;EISSN: 2162-2426Full text available |
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11 |
Material Type: Article
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0.8 V bulk-driven operational amplifierAnalog integrated circuits and signal processing, 2010-06, Vol.63 (3), p.425-432 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2009 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-009-9425-4Full text available |
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12 |
Material Type: Article
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0.9–10.6 GHz UWB mixer using current bleeding for multi-band applicationElectronics letters, 2014-01, Vol.50 (3), p.186-187 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2015 INIST-CNRS ;Copyright The Institution of Engineering & Technology Jan 30, 2014 ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.3804 ;CODEN: ELLEAKFull text available |
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13 |
Material Type: Article
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A 0–1 integer linear programming approach to schedule outages of nuclear power plantsJournal of scheduling, 2013-12, Vol.16 (6), p.551-566 [Peer Reviewed Journal]Springer Science+Business Media New York 2013 ;Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 1094-6136 ;EISSN: 1099-1425 ;DOI: 10.1007/s10951-013-0322-4Full text available |
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14 |
Material Type: Article
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A 0.0018 mm2 frequency-to-digital-converter-based CMOS smart temperature sensorAnalog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2009 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-009-9434-3Full text available |
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15 |
Material Type: Article
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A 0.058mm224μW Temperature Sensor in 40nm CMOS Process with ±0.5∘C Inaccuracy from − 55 to 175∘CCircuits, systems, and signal processing, 2018, Vol.37 (6), p.2278-2298 [Peer Reviewed Journal]Springer Science+Business Media, LLC 2017 ;ISSN: 0278-081X ;EISSN: 1531-5878 ;DOI: 10.1007/s00034-017-0685-4Full text available |
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16 |
Material Type: Article
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A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOSAnalog integrated circuits and signal processing, 2013-12, Vol.77 (3), p.567-582 [Peer Reviewed Journal]Springer Science+Business Media New York 2013 ;ISSN: 0925-1030 ;EISSN: 1573-1979 ;DOI: 10.1007/s10470-013-0168-xFull text available |
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17 |
Material Type: Article
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A 0.1 to 2.5 GHz logarithmic amplifier for RF detectionMicrowave Journal, 1998-07, Vol.41 (7), p.142-145COPYRIGHT 1998 Horizon House Publications, Inc. ;Copyright Horizon House Publications, Inc. Jul 1998 ;ISSN: 0192-6225 ;CODEN: MJIEEFFull text available |
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18 |
Material Type: Article
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A 0.15-to-0.5 V Body-Driven Dynamic Comparator with Rail-to-Rail ICMRJournal of low power electronics and applications, 2023-06, Vol.13 (2), p.35 [Peer Reviewed Journal]COPYRIGHT 2023 MDPI AG ;2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9268 ;EISSN: 2079-9268 ;DOI: 10.3390/jlpea13020035Full text available |
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19 |
Material Type: Article
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A 0.15-μm CMOS baseband LSI employing sleep mode with clock-offset compensation for M2M wireless sensor networksIEEJ transactions on electrical and electronic engineering, 2015-09, Vol.10 (5), p.576-584 [Peer Reviewed Journal]2015 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc. ;ISSN: 1931-4973 ;EISSN: 1931-4981 ;DOI: 10.1002/tee.22121Full text available |
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20 |
Material Type: Article
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A 0.17 pJ/bit 28 Gb/s/pin Single-Ended PAM-4 Transmitter for On-Chip Short-Reach Unterminated ChannelsElectronics (Basel), 2022-08, Vol.11 (16), p.2525 [Peer Reviewed Journal]COPYRIGHT 2022 MDPI AG ;2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics11162525Full text available |