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1
(0, 1) hyperbolic programming problems
(0, 1) hyperbolic programming problems
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(0, 1) hyperbolic programming problems

Naval research logistics quarterly, 1971-03, Vol.18 (1), p.47-57

Copyright © 1971 Wiley Periodicals, Inc., A Wiley Company ;ISSN: 0028-1441 ;EISSN: 1931-9193 ;DOI: 10.1002/nav.3800180104

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2
0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring
0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring
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0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926

ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.6.920

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3
0.05-3 GHz VNA characterization of soil dielectric properties based on the multiline TRL calibration
0.05-3 GHz VNA characterization of soil dielectric properties based on the multiline TRL calibration
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0.05-3 GHz VNA characterization of soil dielectric properties based on the multiline TRL calibration

Measurement science & technology, 2017-02, Vol.28 (2) [Peer Reviewed Journal]

2017 IOP Publishing Ltd ;ISSN: 0957-0233 ;EISSN: 1361-6501 ;DOI: 10.1088/1361-6501/28/2/024007 ;CODEN: MSTCEP

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4
0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers
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0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers

Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal]

1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4

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5
0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs
0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs
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0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs

IEEE photonics journal, 2016-04, Vol.8 (2), p.1-7 [Peer Reviewed Journal]

Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 ;ISSN: 1943-0655 ;EISSN: 1943-0655 ;DOI: 10.1109/JPHOT.2016.2538088 ;CODEN: PJHOC3

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6
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments
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0.1-10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.873-883 [Peer Reviewed Journal]

ISSN: 0018-9499 ;EISSN: 1558-1578 ;DOI: 10.1109/TNS.2021.3064666 ;CODEN: IETNAE

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7
0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
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0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

Electronics letters, 2003-11, Vol.39 (22), p.1594 [Peer Reviewed Journal]

ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20031020

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8
0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithography

Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]

1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEF

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9
0.1-mm electrostatic microrelays switch at up to 100 GHz
0.1-mm electrostatic microrelays switch at up to 100 GHz
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0.1-mm electrostatic microrelays switch at up to 100 GHz

Electronic design, 1997-12, Vol.45 (27), p.34

Copyright Penton Publishing and Marketing Dec 1, 1997 ;ISSN: 0013-4872 ;EISSN: 1944-9550 ;CODEN: ELODAW

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10
0.1 to 18 GHz, 80 x 5 Distribution Matrix
0.1 to 18 GHz, 80 x 5 Distribution Matrix
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0.1 to 18 GHz, 80 x 5 Distribution Matrix

Microwave Journal, 2015-05, p.66

Copyright Horizon House Publications, Inc. May 2015 ;ISSN: 0192-6225 ;CODEN: MJIEEF

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11
0.1 to 6 GHz GaN Amplifiers Redefine SWaP
0.1 to 6 GHz GaN Amplifiers Redefine SWaP
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0.1 to 6 GHz GaN Amplifiers Redefine SWaP

Microwave Journal, 2016-05, p.60

Copyright Horizon House Publications, Inc. May 2016 ;ISSN: 0192-6225 ;CODEN: MJIEEF

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12
0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
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0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs

Solid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal]

ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5

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13
0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD
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0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.135-139 [Peer Reviewed Journal]

Copyright © 1996 John Wiley & Sons, Inc. ;ISSN: 0895-2477 ;EISSN: 1098-2760 ;DOI: 10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M

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14
0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation
0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation
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0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424

ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.3.411

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15
0.12 &#956;m optical lithography performances using an alternating DUV phase shift mask
0.12 &#956;m optical lithography performances using an alternating DUV phase shift mask
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0.12 μm optical lithography performances using an alternating DUV phase shift mask

Microelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal]

1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEF

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16
0.13-&#956;M CMOS Q-band leveled-LO subharmonic mixer with injection-locked frequency-divider quadrature generator
0.13-&#956;M CMOS Q-band leveled-LO subharmonic mixer with injection-locked frequency-divider quadrature generator
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0.13-μM CMOS Q-band leveled-LO subharmonic mixer with injection-locked frequency-divider quadrature generator

Microwave and optical technology letters, 2009-11, Vol.51 (11), p.2663-2665 [Peer Reviewed Journal]

Copyright © 2009 Wiley Periodicals, Inc. ;ISSN: 0895-2477 ;EISSN: 1098-2760 ;DOI: 10.1002/mop.24714

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17
0.13 &#956;m CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination
0.13 &#956;m CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination
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0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination

Electronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal]

2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133

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18
0.15-&#956;m n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppression
0.15-&#956;m n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppression
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0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppression

Electronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (11), p.28-35 [Peer Reviewed Journal]

Copyright © 1996 Wiley Periodicals, Inc., A Wiley Company ;ISSN: 8756-663X ;EISSN: 1520-6432 ;DOI: 10.1002/ecjb.4420791104

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19
0.18 &#956;m CMOS dual-band low-noise amplifier for ZigBee development
0.18 &#956;m CMOS dual-band low-noise amplifier for ZigBee development
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0.18 μm CMOS dual-band low-noise amplifier for ZigBee development

Electronics letters, 2010-01, Vol.46 (1), p.85-86 [Peer Reviewed Journal]

2015 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el.2010.2448 ;CODEN: ELLEAK

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20
0.18 &#956;m CMOS dual-band UWB LNA with interference rejection
0.18 &#956;m CMOS dual-band UWB LNA with interference rejection
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0.18 μm CMOS dual-band UWB LNA with interference rejection

Electronics letters, 2007-09, Vol.43 (20), p.1096-1098 [Peer Reviewed Journal]

2007 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20072054 ;CODEN: ELLEAK

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