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1	Material Type: Article	(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Peer Reviewed Journal] 2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAE Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
2	Material Type: Article	(0 0 1) V surface structures analysed by RHEED and STM Surface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal] 2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCAS Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
3	Material Type: Article	0+-0- Crossings in Electric Fields—A Possibility for Detecting Parity Violation in Helium Europhysics letters, 1990-01, Vol.11 (1), p.25-30 [Peer Reviewed Journal] ISSN: 0295-5075 ;EISSN: 1286-4854 ;DOI: 10.1209/0295-5075/11/1/005 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
4	Material Type: Article	0-0 Energies Using Hybrid Schemes: Benchmarks of TD-DFT, CIS(D), ADC(2), CC2, and BSE/GW formalisms for 80 Real-Life Compounds Journal of chemical theory and computation, 2015-11, Vol.11 (11), p.5340-5359 [Peer Reviewed Journal] Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 1549-9618 ;EISSN: 1549-9626 ;DOI: 10.1021/acs.jctc.5b00619 Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
5	Material Type: Article	0 + → 0 − pion-like excitations in light and medium nuclei Physics letters. B, 1985-01, Vol.164 (4), p.253-257 [Peer Reviewed Journal] 1985 ;ISSN: 0370-2693 ;EISSN: 1873-2445 ;DOI: 10.1016/0370-2693(85)90320-X Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
6	Material Type: Article	0.025 mJ/image Fast-scan and SNR Enhanced Electrical Impedance Tomography IC for Lung Ventilation Monitoring JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(6), 78, pp.920-926 ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.6.920 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
7	Material Type: Article	0.065 μm gate InGaP/InGaAs/GaAs pseudomorphic HEMTs with highly-doped 11.5 nm thick InGaP electron supply layers Solid-state electronics, 1997-10, Vol.41 (10), p.1647-1650, Article 1647 [Peer Reviewed Journal] 1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
8	Material Type: Article	0.1-1-THz High-Repetition-Rate Femtosecond Pulse Generation From Quasi-CW Dual-Pumped All-Fiber Phase-Locked Kerr Combs IEEE photonics journal, 2016-04, Vol.8 (2), p.1-7 [Peer Reviewed Journal] Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 ;ISSN: 1943-0655 ;EISSN: 1943-0655 ;DOI: 10.1109/JPHOT.2016.2538088 ;CODEN: PJHOC3 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
9	Material Type: Article	0.1–10 keV soft X-ray beamline for surface EXAFS studies at the Daresbury SRS Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1986-05, Vol.246 (1), p.131-133 [Peer Reviewed Journal] 1986 ;ISSN: 0168-9002 ;EISSN: 1872-9576 ;DOI: 10.1016/0168-9002(86)90059-8 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
10	Material Type: Article	0.1 eV HgCdTe photoconductive detector performance Infrared physics, 1977-01, Vol.17 (2), p.127-135 1977 ;ISSN: 0020-0891 ;DOI: 10.1016/0020-0891(77)90105-1 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
11	Material Type: Article	0.1-Micrometer scaling by 1:1 synchrotron radiation lithography Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal] 1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEF Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
12	Material Type: Article	0.1 nm information limit with the CM30FEG-special Tübingen Ultramicroscopy, 1993, Vol.52 (3), p.575-580 [Peer Reviewed Journal] 1993 ;1994 INIST-CNRS ;ISSN: 0304-3991 ;EISSN: 1879-2723 ;DOI: 10.1016/0304-3991(93)90076-A ;CODEN: ULTRD6 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
13	Material Type: Article	0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs Solid-state electronics, 2000-09, Vol.44 (9), p.1685-1688 [Peer Reviewed Journal] ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
14	Material Type: Article	0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA Thin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Peer Reviewed Journal] 1996 INIST-CNRS ;ISSN: 0040-6090 ;EISSN: 1879-2731 ;DOI: 10.1016/0040-6090(95)06838-4 ;CODEN: THSFAP Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
15	Material Type: Article	0.11-2.5 GHz All-digital DLL for Mobile Memory Interface with Phase Sampling Window Adaptation to Reduce Jitter Accumulation JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(3), 75, pp.411-424 ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.3.411 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
16	Material Type: Article	0.12 μm optical lithography performances using an alternating DUV phase shift mask Microelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal] 1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEF Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
17	Material Type: Article	0.13 μm CMOS Traveling-Wave Power Amplifier with On- and Off-Chip Gate-Line Termination Electronics (Basel), 2020-01, Vol.9 (1), p.133 [Peer Reviewed Journal] 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9010133 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
18	Material Type: Article	(0,2) deformations of linear sigma models The journal of high energy physics, 2011-07, Vol.2011 (7), Article 44 [Peer Reviewed Journal] SISSA, Trieste, Italy 2011 ;SISSA, Trieste, Italy 2011. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP07(2011)044 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
19	Material Type: Article	(0,2) dualities and the 4-simplex The journal of high energy physics, 2019-08, Vol.2019 (8), p.1-49, Article 132 [Peer Reviewed Journal] The Author(s) 2019 ;Journal of High Energy Physics is a copyright of Springer, (2019). All Rights Reserved. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP08(2019)132 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
20	Material Type: Article	A 0.0012 mm[sup.2] 6-bit 700 MS/s 1 mW Calibration-Free Pseudo-Loop-Unrolled SAR ADC in 28 nm CMOS Electronics (Basel), 2022-06, Vol.11 (11) [Peer Reviewed Journal] COPYRIGHT 2022 MDPI AG ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics11111707 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by

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Results 1 - 20 of 2,468,388 for All Library Resources

2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAE

2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCAS

ISSN: 0295-5075 ;EISSN: 1286-4854 ;DOI: 10.1209/0295-5075/11/1/005

Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 1549-9618 ;EISSN: 1549-9626 ;DOI: 10.1021/acs.jctc.5b00619

1985 ;ISSN: 0370-2693 ;EISSN: 1873-2445 ;DOI: 10.1016/0370-2693(85)90320-X

ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.6.920

1997 Elsevier Science Ltd ;ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(97)00118-4

Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016 ;ISSN: 1943-0655 ;EISSN: 1943-0655 ;DOI: 10.1109/JPHOT.2016.2538088 ;CODEN: PJHOC3

1986 ;ISSN: 0168-9002 ;EISSN: 1872-9576 ;DOI: 10.1016/0168-9002(86)90059-8

1977 ;ISSN: 0020-0891 ;DOI: 10.1016/0020-0891(77)90105-1

1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEF

1993 ;1994 INIST-CNRS ;ISSN: 0304-3991 ;EISSN: 1879-2723 ;DOI: 10.1016/0304-3991(93)90076-A ;CODEN: ULTRD6

ISSN: 0038-1101 ;EISSN: 1879-2405 ;DOI: 10.1016/S0038-1101(00)00060-5

1996 INIST-CNRS ;ISSN: 0040-6090 ;EISSN: 1879-2731 ;DOI: 10.1016/0040-6090(95)06838-4 ;CODEN: THSFAP

ISSN: 1598-1657 ;EISSN: 2233-4866 ;DOI: 10.5573/JSTS.2017.17.3.411

1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEF

SISSA, Trieste, Italy 2011 ;SISSA, Trieste, Italy 2011. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP07(2011)044

The Author(s) 2019 ;Journal of High Energy Physics is a copyright of Springer, (2019). All Rights Reserved. ;ISSN: 1029-8479 ;EISSN: 1029-8479 ;DOI: 10.1007/JHEP08(2019)132

COPYRIGHT 2022 MDPI AG ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics11111707

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