Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Article
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDJournal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAEFull text available |
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2 |
Material Type: Article
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(0 0 1) V surface structures analysed by RHEED and STMSurface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCASFull text available |
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3 |
Material Type: Article
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{0, 1/2}-cuts and the linear ordering problem : Surfaces that define facetsSIAM journal on discrete mathematics, 2007, Vol.20 (4), p.893-912 [Peer Reviewed Journal]2008 INIST-CNRS ;ISSN: 0895-4801 ;EISSN: 1095-7146 ;DOI: 10.1137/S0895480104440985 ;CODEN: SJDMECFull text available |
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4 |
Material Type: Article
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(0, ±1) ideal matricesMathematical programming, 1998-02, Vol.80 (3), p.265-281 [Peer Reviewed Journal]1998 INIST-CNRS ;ISSN: 0025-5610 ;EISSN: 1436-4646 ;DOI: 10.1007/BF01581169 ;CODEN: MHPGA4Full text available |
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5 |
Material Type: Conference Proceeding
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0–1 Laws for Fragments of Existential Second-Order Logic: A SurveyLecture notes in computer science, 2000, p.84-98 [Peer Reviewed Journal]Springer-Verlag Berlin Heidelberg 2000 ;2000 INIST-CNRS ;ISSN: 0302-9743 ;ISBN: 3540679014 ;ISBN: 9783540679011 ;EISSN: 1611-3349 ;EISBN: 9783540446125 ;EISBN: 3540446125 ;DOI: 10.1007/3-540-44612-5_6Full text available |
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6 |
Material Type: Article
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(0, 2) Heterotic string compactifications from N=2 superconformal theoriesPhysics letters. B, 1989-08, Vol.227 (1), p.34-40 [Peer Reviewed Journal]1989 ;1990 INIST-CNRS ;ISSN: 0370-2693 ;EISSN: 1873-2445 ;DOI: 10.1016/0370-2693(89)91280-X ;CODEN: PYLBAJFull text available |
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7 |
Material Type: Article
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(0, 2) – Interpolation of Entire FunctionsCanadian journal of mathematics, 1986-10, Vol.38 (5), p.1210-1227 [Peer Reviewed Journal]Copyright © Canadian Mathematical Society 1986 ;1987 INIST-CNRS ;ISSN: 0008-414X ;EISSN: 1496-4279 ;DOI: 10.4153/CJM-1986-061-2 ;CODEN: CJMAABFull text available |
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8 |
Material Type: Article
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.0992 ;CODEN: ELLEAKFull text available |
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9 |
Material Type: Article
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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiencyElectronics letters, 2013-10, Vol.49 (21), p.1340-1342 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.2670 ;CODEN: ELLEAKFull text available |
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10 |
Material Type: Article
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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOSElectronics letters, 2012, Vol.48 (10), p.552-554 [Peer Reviewed Journal]2015 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el.2012.0579 ;CODEN: ELLEAKFull text available |
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11 |
Material Type: Article
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEFFull text available |
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12 |
Material Type: Article
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0.1 nm information limit with the CM30FEG-special TübingenUltramicroscopy, 1993, Vol.52 (3), p.575-580 [Peer Reviewed Journal]1993 ;1994 INIST-CNRS ;ISSN: 0304-3991 ;EISSN: 1879-2723 ;DOI: 10.1016/0304-3991(93)90076-A ;CODEN: ULTRD6Full text available |
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13 |
Material Type: Article
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0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscopeJournal of physics. E, Scientific instruments, 1986-12, Vol.19 (12), p.1025-10261987 INIST-CNRS ;ISSN: 0022-3735 ;DOI: 10.1088/0022-3735/19/12/007 ;CODEN: JPSIAEFull text available |
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14 |
Material Type: Article
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Peer Reviewed Journal]1996 INIST-CNRS ;ISSN: 0040-6090 ;EISSN: 1879-2731 ;DOI: 10.1016/0040-6090(95)06838-4 ;CODEN: THSFAPFull text available |
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15 |
Material Type: Article
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0.12 μm optical lithography performances using an alternating DUV phase shift maskMicroelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal]1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEFFull text available |
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16 |
Material Type: Article
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0.15μm E-Beam T-shaped gates for GaAs FETsMicroelectronic engineering, 1990, Vol.11 (1), p.97-100 [Peer Reviewed Journal]1990 ;1990 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(90)90080-D ;CODEN: MIENEFFull text available |
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17 |
Material Type: Article
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0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delayElectronics letters, 2008-08, Vol.44 (17), p.1014-1016 [Peer Reviewed Journal]2008 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20081872 ;CODEN: ELLEAKFull text available |
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18 |
Material Type: Article
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0.18 μm 3-6 GHz CMOS broadband LNA for UWB radioElectronics letters, 2005-06, Vol.41 (12), p.696-698 [Peer Reviewed Journal]2005 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20057855 ;CODEN: ELLEAKFull text available |
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19 |
Material Type: Article
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0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4dB gain and 100.7±17.4ps group-delayElectronics letters, 2007, Vol.43 (24), p.1359-1360 [Peer Reviewed Journal]2008 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;CODEN: ELLEAKFull text available |
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20 |
Material Type: Article
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0.18 μm CMOS backplane receiver with decision-feedback equalisation embeddedElectronics letters, 2006-07, Vol.42 (13), p.752-754 [Peer Reviewed Journal]2006 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20061116 ;CODEN: ELLEAKFull text available |