Results 1 - 20 of 951,383 for All Library Resources
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- Peer-reviewed Journals (831,308)
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
Material Type: Article
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(0 0 1) V surface structures analysed by RHEED and STMSurface science, 2001-02, Vol.473 (3), p.172-182 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0039-6028 ;EISSN: 1879-2758 ;DOI: 10.1016/S0039-6028(00)00972-9 ;CODEN: SUSCASFull text available |
| 2 |
Material Type: Article
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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rateElectronics letters, 2013-05, Vol.49 (11), p.692-694 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.0992 ;CODEN: ELLEAKFull text available |
| 3 |
Material Type: Article
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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiencyElectronics letters, 2013-10, Vol.49 (21), p.1340-1342 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2014 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.2670 ;CODEN: ELLEAKFull text available |
| 4 |
Material Type: Article
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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOSElectronics letters, 2012, Vol.48 (10), p.552-554 [Peer Reviewed Journal]2015 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el.2012.0579 ;CODEN: ELLEAKFull text available |
| 5 |
Material Type: Article
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0.1-Micrometer scaling by 1:1 synchrotron radiation lithographyMicroelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Peer Reviewed Journal]1992 ;1993 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(92)90133-C ;CODEN: MIENEFFull text available |
| 6 |
Material Type: Article
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0.1 ps resolution delay circuit for waveform measurement in the stroboscopic scanning electron microscopeJournal of physics. E, Scientific instruments, 1986-12, Vol.19 (12), p.1025-10261987 INIST-CNRS ;ISSN: 0022-3735 ;DOI: 10.1088/0022-3735/19/12/007 ;CODEN: JPSIAEFull text available |
| 7 |
Material Type: Article
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0.12 μm optical lithography performances using an alternating DUV phase shift maskMicroelectronic engineering, 1998-03, Vol.41, p.61-64 [Peer Reviewed Journal]1998 ;1998 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(98)00013-6 ;CODEN: MIENEFFull text available |
| 8 |
Material Type: Article
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0.15μm E-Beam T-shaped gates for GaAs FETsMicroelectronic engineering, 1990, Vol.11 (1), p.97-100 [Peer Reviewed Journal]1990 ;1990 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(90)90080-D ;CODEN: MIENEFFull text available |
| 9 |
Material Type: Article
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0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delayElectronics letters, 2008-08, Vol.44 (17), p.1014-1016 [Peer Reviewed Journal]2008 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20081872 ;CODEN: ELLEAKFull text available |
| 10 |
Material Type: Article
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0.18 μm 3-6 GHz CMOS broadband LNA for UWB radioElectronics letters, 2005-06, Vol.41 (12), p.696-698 [Peer Reviewed Journal]2005 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20057855 ;CODEN: ELLEAKFull text available |
| 11 |
Material Type: Article
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0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4dB gain and 100.7±17.4ps group-delayElectronics letters, 2007, Vol.43 (24), p.1359-1360 [Peer Reviewed Journal]2008 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;CODEN: ELLEAKFull text available |
| 12 |
Material Type: Article
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0.18 μm CMOS backplane receiver with decision-feedback equalisation embeddedElectronics letters, 2006-07, Vol.42 (13), p.752-754 [Peer Reviewed Journal]2006 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20061116 ;CODEN: ELLEAKFull text available |
| 13 |
Material Type: Article
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0.18 μm CMOS dual-band low-noise amplifier for ZigBee developmentElectronics letters, 2010-01, Vol.46 (1), p.85-86 [Peer Reviewed Journal]2015 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el.2010.2448 ;CODEN: ELLEAKFull text available |
| 14 |
Material Type: Article
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0.18 μm CMOS dual-band UWB LNA with interference rejectionElectronics letters, 2007-09, Vol.43 (20), p.1096-1098 [Peer Reviewed Journal]2007 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20072054 ;CODEN: ELLEAKFull text available |
| 15 |
Material Type: Article
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0.18 μm CMOS integrated circuit design for impedance-based structural health monitoringIET circuits, devices & systems, 2010-05, Vol.4 (3), p.227-238 [Peer Reviewed Journal]2015 INIST-CNRS ;ISSN: 1751-858X ;EISSN: 1751-8598 ;DOI: 10.1049/iet-cds.2009.0238Full text available |
| 16 |
Material Type: Article
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0.2 μm T-gate InAlAs/InGaAs MODFET with FT=170 GHzMicroelectronic engineering, 1990-04, Vol.11 (1-4), p.69-72 [Peer Reviewed Journal]1990 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(90)90075-5 ;CODEN: MIENEFFull text available |
| 17 |
Material Type: Article
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0.3 μm contact layer: process characterisationMicroelectronic engineering, 1999, Vol.46 (1), p.89-92 [Peer Reviewed Journal]1999 Elsevier Science B.V. All rights reserved ;1999 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/S0167-9317(99)00022-2 ;CODEN: MIENEFFull text available |
| 18 |
Material Type: Article
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0.35 μm pattern fabrication using quartz-etch attenuate phase-shifting mask in an I-line stepper with a 0.50 NA and a 0.60 sigmaMicroelectronic engineering, 1995-02, Vol.27 (1), p.275-278 [Peer Reviewed Journal]1995 Elsevier Science B.V. All rights reserved ;1995 INIST-CNRS ;ISSN: 0167-9317 ;EISSN: 1873-5568 ;DOI: 10.1016/0167-9317(94)00106-5 ;CODEN: MIENEFFull text available |
| 19 |
Material Type: Article
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0.4 mW wideband LNA with double gm enhancement and feed-forward noise cancellationElectronics letters, 2014-02, Vol.50 (5), p.400-401 [Peer Reviewed Journal]The Institution of Engineering and Technology ;2020 The Institution of Engineering and Technology ;2015 INIST-CNRS ;ISSN: 0013-5194 ;ISSN: 1350-911X ;EISSN: 1350-911X ;DOI: 10.1049/el.2013.3537 ;CODEN: ELLEAKFull text available |
| 20 |
Material Type: Article
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0.5-25 GHz inductorless single-ended resistive mixer in 0.13 μm CMOSElectronics letters, 2009-01, Vol.45 (2), p.108-110 [Peer Reviewed Journal]2009 INIST-CNRS ;ISSN: 0013-5194 ;EISSN: 1350-911X ;DOI: 10.1049/el:20092599 ;CODEN: ELLEAKFull text available |
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