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1
Effect of the substrate temperature on the synthesis of the Cu2CoSnS4 thin films by spray pyrolysis for solar cells devices
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Effect of the substrate temperature on the synthesis of the Cu2CoSnS4 thin films by spray pyrolysis for solar cells devices

Journal of materials science, 2023-02, Vol.34 (4), p.304, Article 304 [Peer Reviewed Journal]

The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. ;Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0957-4522 ;ISSN: 0022-2461 ;EISSN: 1573-482X ;EISSN: 1573-4803 ;DOI: 10.1007/s10854-022-09720-6

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2
Synthesis and characterizations of CdS nanorods by SILAR method: effect of film thickness
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Article
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Synthesis and characterizations of CdS nanorods by SILAR method: effect of film thickness

Journal of materials science, 2011-07, Vol.46 (14), p.5009-5015 [Peer Reviewed Journal]

Springer Science+Business Media, LLC 2011 ;COPYRIGHT 2011 Springer ;Journal of Materials Science is a copyright of Springer, (2011). All Rights Reserved. ;ISSN: 0022-2461 ;ISSN: 0957-4522 ;ISSN: 1573-482X ;EISSN: 1573-4803 ;EISSN: 1573-482X ;DOI: 10.1007/s10853-011-5421-z

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3
Hybrid porous nanotube crystal networks for nanostructured device applications
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Hybrid porous nanotube crystal networks for nanostructured device applications

Journal of materials science, 2013-04, Vol.48 (7), p.2953-2960 [Peer Reviewed Journal]

Springer Science+Business Media New York 2012 ;COPYRIGHT 2013 Springer ;Journal of Materials Science is a copyright of Springer, (2012). All Rights Reserved. ;Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0022-2461 ;ISSN: 0957-4522 ;EISSN: 1573-4803 ;EISSN: 1573-482X ;DOI: 10.1007/s10853-012-7077-8

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