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1
Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET
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Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Applied sciences, 2019-08, Vol.9 (15), p.3163 [Peer Reviewed Journal]

2019. This work is licensed under https://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2076-3417 ;EISSN: 2076-3417 ;DOI: 10.3390/app9153163

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2
Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories
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Article
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Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories

Electronics (Basel), 2021-01, Vol.10 (1), p.38 [Peer Reviewed Journal]

2021. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics10010038

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3
Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location
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Article
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Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location

Electronics (Basel), 2020-02, Vol.9 (2), p.268 [Peer Reviewed Journal]

ISSN: 2079-9292 ;EISSN: 2079-9292 ;DOI: 10.3390/electronics9020268

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