Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Patent
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Cooling module group with tangential turbine for front face of electric or hybrid motor vehicleDigital Resources/Online E-Resources |
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2 |
Material Type: Book
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Nitride Semiconductor Devices: Fundamentals and ApplicationsISBN: 3527411011 ;ISBN: 9783527411016 ;ISBN: 9783527649037 ;ISBN: 3527649034 ;EISBN: 3527649034 ;EISBN: 9783527649037 ;EISBN: 9783527649020 ;EISBN: 3527649026 ;DOI: 10.1002/9783527649006 ;OCLC: 850148282Full text available |
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3 |
Material Type: Patent
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22 -40GHz broadband balanced deviceDigital Resources/Online E-Resources |
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4 |
Material Type: Patent
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22 code unit-based image compression method and 22 code unit-based image decompression method, and image compression and decompression systemDigital Resources/Online E-Resources |
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5 |
Material Type: Patent
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Low-sidelobe sparse cloth phased array based on 22 subarrayDigital Resources/Online E-Resources |
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6 |
Material Type: Patent
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22 core plug -in components switching pencilDigital Resources/Online E-Resources |
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7 |
Material Type: Patent
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22 display receiving integrated chip for terahertz radar and detection imagingDigital Resources/Online E-Resources |
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8 |
Material Type: Patent
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A low coupling 22 MIMO arrayDigital Resources/Online E-Resources |
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9 |
Material Type: Patent
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一种自适性22kHz声频信号产生器及其产生方法Digital Resources/Online E-Resources |
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10 |
Material Type: Patent
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基于22nm工艺的抗辐照FDSOI场效应管及其制备方法Digital Resources/Online E-Resources |
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11 |
Material Type: Patent
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一种高阻燃耐热型22F覆铜板的制备工艺Digital Resources/Online E-Resources |
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12 |
Material Type: Patent
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Broadband high-isolation 22 microstrip antennaDigital Resources/Online E-Resources |
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13 |
Material Type: Patent
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基于22nm工艺的SONOS结构抗辐照FDSOI场效应管及其制备方法Digital Resources/Online E-Resources |
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14 |
Material Type: Patent
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一种抽蓄机组24/22变极式磁极引线结构Digital Resources/Online E-Resources |
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15 |
Material Type: Patent
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一种用于高频头上的22KHz信号抗干扰调谐放大电路Digital Resources/Online E-Resources |
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16 |
Material Type: Patent
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Anti-radiation FDSOI field effect transistor based on 22 nm process condition and preparation method of anti-radiation FDSOI field effect transistorDigital Resources/Online E-Resources |
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17 |
Material Type: Patent
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22 array layout based on composite dielectric gate light-sensitive detector and operation method thereofDigital Resources/Online E-Resources |
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18 |
Material Type: Patent
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A 22 pixel subarray-based 3D image sensor defect detection and repair methodDigital Resources/Online E-Resources |
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19 |
Material Type: Patent
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TERMINAL MODULEDigital Resources/Online E-Resources |
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20 |
Material Type: Patent
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一种22翅片高散热型无刷电机端盖Digital Resources/Online E-Resources |