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1 |
Material Type: Article
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Recent developments, challenges, and pathways to stable dropwise condensation: A perspectiveApplied physics letters, 2020-06, Vol.116 (26) [Peer Reviewed Journal]Author(s) ;2020 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/5.0011642 ;CODEN: APPLABFull text available |
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2 |
Material Type: Article
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Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substratesApplied physics letters, 2015-05, Vol.106 (18) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4919761Full text available |
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3 |
Material Type: Article
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Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with SiApplied physics letters, 2015-06, Vol.106 (23) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4921962Full text available |
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4 |
Material Type: Article
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A flexible graphene terahertz detectorApplied physics letters, 2017-07, Vol.111 (2) [Peer Reviewed Journal]Author(s) ;ISSN: 0003-6951 ;ISSN: 1077-3118 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4993434 ;CODEN: APPLABFull text available |
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5 |
Material Type: Article
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Fabrication of non-polar GaN based highly responsive and fast UV photodetectorApplied physics letters, 2017-03, Vol.110 (10) [Peer Reviewed Journal]Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4978427 ;CODEN: APPLABFull text available |
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6 |
Material Type: Article
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Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfacesApplied physics letters, 2019-10, Vol.115 (15) [Peer Reviewed Journal]Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5110383 ;CODEN: APPLABFull text available |
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7 |
Material Type: Article
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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) siliconApplied physics letters, 2015-02, Vol.106 (7) [Peer Reviewed Journal]2015 AIP Publishing LLC. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4913432Full text available |
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8 |
Material Type: Article
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Radiative thermal diode driven by nonreciprocal surface wavesApplied physics letters, 2019-04, Vol.114 (16) [Peer Reviewed Journal]Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5093626 ;CODEN: APPLABFull text available |
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9 |
Material Type: Article
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High-performance terahertz wave absorbers made of silicon-based metamaterialsApplied physics letters, 2015-08, Vol.107 (7) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4929151Full text available |
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10 |
Material Type: Article
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Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectorsApplied physics letters, 2022-03, Vol.120 (10) [Peer Reviewed Journal]Author(s) ;2022 Author(s). Published under an exclusive license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/5.0080855 ;CODEN: APPLABFull text available |
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11 |
Material Type: Article
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Ultrasensitive terahertz sensing with high- Q Fano resonances in metasurfacesApplied physics letters, 2014-10, Vol.105 (17) [Peer Reviewed Journal]2014 AIP Publishing LLC. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4895595Full text available |
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12 |
Material Type: Article
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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrateApplied physics letters, 2016-08, Vol.109 (9) [Peer Reviewed Journal]Author(s) ;2016 Author(s). Published by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4961936 ;CODEN: APPLABFull text available |
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13 |
Material Type: Article
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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetectorApplied physics letters, 2017-05, Vol.110 (22) [Peer Reviewed Journal]Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4984904 ;CODEN: APPLABFull text available |
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14 |
Material Type: Article
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Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdownApplied physics letters, 2015-12, Vol.107 (24) [Peer Reviewed Journal]2015 AIP Publishing LLC. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4937436Full text available |
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15 |
Material Type: Article
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Suppression of 1/ f noise in near-ballistic h -BN-graphene- h- BN heterostructure field-effect transistorsApplied physics letters, 2015-07, Vol.107 (2) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4926872Full text available |
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16 |
Material Type: Article
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopyApplied physics letters, 2016-02, Vol.108 (5) [Peer Reviewed Journal]AIP Publishing LLC ;2016 AIP Publishing LLC. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4941429 ;CODEN: APPLABFull text available |
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17 |
Material Type: Article
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Analysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonatorsApplied physics letters, 2018-02, Vol.112 (6) [Peer Reviewed Journal]Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5006888 ;CODEN: APPLABFull text available |
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18 |
Material Type: Article
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Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescenceApplied physics letters, 2014-10, Vol.105 (15) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4898597Full text available |
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19 |
Material Type: Article
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Efficient and controlled manipulation of the spin Hall angle in Pt–Ag interfaceApplied physics letters, 2022-06, Vol.120 (24) [Peer Reviewed Journal]Author(s) ;2022 Author(s). Published under an exclusive license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/5.0093853 ;CODEN: APPLABFull text available |
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20 |
Material Type: Article
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Acceptor doping of β-Ga2O3 by Mg and N ion implantationsApplied physics letters, 2018-09, Vol.113 (10) [Peer Reviewed Journal]Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5050040 ;CODEN: APPLABFull text available |