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1 |
Material Type: Article
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High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2SeNature nanotechnology, 2017-06, Vol.12 (6), p.530-534 [Peer Reviewed Journal]Copyright Nature Publishing Group Jun 2017 ;ISSN: 1748-3387 ;EISSN: 1748-3395 ;DOI: 10.1038/nnano.2017.43Full text available |
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2 |
Material Type: Article
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Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paperNature communications, 2020-07, Vol.11 (1), p.3566-3566, Article 3566 [Peer Reviewed Journal]The Author(s) 2020. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;The Author(s) 2020 ;ISSN: 2041-1723 ;EISSN: 2041-1723 ;DOI: 10.1038/s41467-020-17297-z ;PMID: 32678084Full text available |
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3 |
Material Type: Article
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Antenna-integrated 0.6 THz FET direct detectors based on CVD grapheneNano letters, 2014-10, Vol.14 (10), p.5834 [Peer Reviewed Journal]ISSN: 1530-6992 ;ISSN: 1530-6984 ;EISSN: 1530-6992 ;DOI: 10.1021/nl5027309Digital Resources/Online E-Resources |
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4 |
Material Type: Article
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Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent AdvancesJOM (1989), 2019-01, Vol.71 (1), p.246-255 [Peer Reviewed Journal]The Minerals, Metals & Materials Society 2018 ;Copyright Springer Nature B.V. Jan 2019 ;ISSN: 1047-4838 ;EISSN: 1543-1851 ;DOI: 10.1007/s11837-018-3140-5Full text available |
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5 |
Material Type: Article
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Vertical MoS2 transistors with sub-1-nm gate lengthsNature (London), 2022-03, Vol.603 (7900), p.259-264 [Peer Reviewed Journal]Copyright Nature Publishing Group Mar 10, 2022 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-04323-3Full text available |
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6 |
Material Type: Article
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Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with SiApplied physics letters, 2015-06, Vol.106 (23) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4921962Full text available |
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7 |
Material Type: Article
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Carbon Nanotube Assembly and Integration for ApplicationsNanoscale research letters, 2019-07, Vol.14 (1), p.220-47, Article 220 [Peer Reviewed Journal]The Author(s). 2019 ;Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved. © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 1931-7573 ;EISSN: 1556-276X ;DOI: 10.1186/s11671-019-3046-3 ;PMID: 31263975Full text available |
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8 |
Material Type: Article
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Low-defect-density WS2 by hydroxide vapor phase depositionNature communications, 2022-07, Vol.13 (1), p.4149-4149, Article 4149 [Peer Reviewed Journal]The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;The Author(s) 2022 ;ISSN: 2041-1723 ;EISSN: 2041-1723 ;DOI: 10.1038/s41467-022-31886-0 ;PMID: 35851038Full text available |
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9 |
Material Type: Article
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Graphene nanoribbons initiated from molecularly derived seedsNature communications, 2022-05, Vol.13 (1), p.2992-2992, Article 2992 [Peer Reviewed Journal]2022. The Author(s). ;The Author(s) 2022. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;The Author(s) 2022 ;ISSN: 2041-1723 ;EISSN: 2041-1723 ;DOI: 10.1038/s41467-022-30563-6 ;PMID: 35637229Full text available |
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10 |
Material Type: Article
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Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substratesApplied physics letters, 2021-12, Vol.119 (25) [Peer Reviewed Journal]Author(s) ;2021 Author(s). Published under an exclusive license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/5.0074453 ;CODEN: APPLABFull text available |
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11 |
Material Type: Article
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Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfideNature (London), 2018-02, Vol.554 (7693), p.500-504 [Peer Reviewed Journal]COPYRIGHT 2018 Nature Publishing Group ;COPYRIGHT 2018 Nature Publishing Group ;Copyright Nature Publishing Group Feb 22, 2018 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/nature25747 ;PMID: 29469093Full text available |
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12 |
Material Type: Article
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Single-crystal, large-area, fold-free monolayer grapheneNature (London), 2021-08, Vol.596 (7873), p.519-524 [Peer Reviewed Journal]COPYRIGHT 2021 Nature Publishing Group ;Copyright Nature Publishing Group Aug 26, 2021 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03753-3Full text available |
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13 |
Material Type: Article
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Benchmarking monolayer MoS2 and WS2 field-effect transistorsNature communications, 2021-01, Vol.12 (1), p.693-693, Article 693 [Peer Reviewed Journal]The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;The Author(s) 2021 ;ISSN: 2041-1723 ;EISSN: 2041-1723 ;DOI: 10.1038/s41467-020-20732-w ;PMID: 33514710Full text available |
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14 |
Material Type: Article
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Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junctionApplied physics letters, 2015-05, Vol.106 (18) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4919866Full text available |
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15 |
Material Type: Article
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Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitrideApplied physics letters, 2015-11, Vol.107 (20) [Peer Reviewed Journal]2015 AIP Publishing LLC. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4936191Full text available |
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16 |
Material Type: Article
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Solution-processable 2D semiconductors for high-performance large-area electronicsNature (London), 2018-10, Vol.562 (7726), p.254-258 [Peer Reviewed Journal]COPYRIGHT 2018 Nature Publishing Group ;COPYRIGHT 2018 Nature Publishing Group ;Copyright Nature Publishing Group Oct 11, 2018 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-018-0574-4 ;PMID: 30283139Full text available |
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17 |
Material Type: Article
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Transition metal-catalysed molecular n-doping of organic semiconductorsNature (London), 2021-11, Vol.599 (7883), p.67-73 [Peer Reviewed Journal]2021. The Author(s), under exclusive licence to Springer Nature Limited. ;Copyright Nature Publishing Group Nov 4, 2021 ;ISSN: 0028-0836 ;ISSN: 1476-4687 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03942-0 ;PMID: 34732866Full text available |
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18 |
Material Type: Article
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Monolayer atomic crystal molecular superlatticesNature (London), 2018-03, Vol.555 (7695), p.231-236 [Peer Reviewed Journal]COPYRIGHT 2018 Nature Publishing Group ;COPYRIGHT 2018 Nature Publishing Group ;Copyright Nature Publishing Group Mar 8, 2018 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/nature25774 ;PMID: 29517002Full text available |
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19 |
Material Type: Article
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Carbon-nanoparticle-assisted growth of high quality bilayer WS2 by atmospheric pressure chemical vapor depositionNano research, 2019-11, Vol.12 (11), p.2802-2807 [Peer Reviewed Journal]Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 ;Nano Research is a copyright of Springer, (2019). All Rights Reserved. ;Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019. ;ISSN: 1998-0124 ;EISSN: 1998-0000 ;DOI: 10.1007/s12274-019-2516-3Full text available |
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20 |
Material Type: Article
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High-κ perovskite membranes as insulators for two-dimensional transistorsNature (London), 2022-05, Vol.605 (7909), p.262-267 [Peer Reviewed Journal]2022. The Author(s), under exclusive licence to Springer Nature Limited. ;Copyright Nature Publishing Group May 12, 2022 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-022-04588-2 ;PMID: 35546188Full text available |