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1	Material Type: Article	Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance IEEE transactions on power electronics, 2018-06, Vol.33 (6), p.5262-5273 [Peer Reviewed Journal] ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2017.2730260 ;CODEN: ITPEE8 Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
2	Material Type: Article	Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters – A Review IEEE transactions on power electronics, 2012-06, Vol.27 (6), p.3081-3092 [Peer Reviewed Journal] Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2011.2178433 Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
3	Material Type: Article	Counterfeit Integrated Circuits: A Rising Threat in the Global Semiconductor Supply Chain Proceedings of the IEEE, 2014-08, Vol.102 (8), p.1207-1228 [Peer Reviewed Journal] ISSN: 0018-9219 ;EISSN: 1558-2256 ;DOI: 10.1109/JPROC.2014.2332291 ;CODEN: IEEPAD Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
4	Material Type: Article	Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructures Nature nanotechnology, 2018-06, Vol.13 (6), p.520-520 [Peer Reviewed Journal] Copyright Nature Publishing Group Jun 2018 ;ISSN: 1748-3387 ;EISSN: 1748-3395 ;DOI: 10.1038/s41565-018-0136-9 ;PMID: 29789635 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
5	Material Type: Article	Review of Modern Field Effect Transistor Technologies for Scaling Journal of physics. Conference series, 2020-08, Vol.1617 (1), p.12054 [Peer Reviewed Journal] Published under licence by IOP Publishing Ltd ;2020. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 1742-6588 ;EISSN: 1742-6596 ;DOI: 10.1088/1742-6596/1617/1/012054 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
6	Material Type: Article	Leakage and breakdown mechanisms of GaN vertical power FinFETs Applied physics letters, 2019-04, Vol.114 (16) [Peer Reviewed Journal] Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5092433 ;CODEN: APPLAB Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
7	Material Type: Article	Vertical MoS2 transistors with sub-1-nm gate lengths Nature (London), 2022-03, Vol.603 (7900), p.259-264 [Peer Reviewed Journal] Copyright Nature Publishing Group Mar 10, 2022 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-04323-3 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
8	Material Type: Article	Extreme Temperature Modeling of AlGaN/GaN HEMTs IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.430-437 [Peer Reviewed Journal] ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2019.2960573 ;CODEN: IETDAI Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
9	Material Type: Article	High-Speed 9.6-μm Long-Wave Infrared Free- Space Transmission with a Directly-Modulated QCL and a Fully-Passive QCD Journal of lightwave technology, 2023-02, Vol.41 (4), p.1-7 [Peer Reviewed Journal] ISSN: 0733-8724 ;ISSN: 1558-2213 ;EISSN: 1558-2213 ;DOI: 10.1109/JLT.2022.3207010 ;CODEN: JLTEDG Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
10	Material Type: Article	A critical review of recent progress on negative capacitance field-effect transistors Applied physics letters, 2019-03, Vol.114 (9) [Peer Reviewed Journal] Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5092684 ;CODEN: APPLAB Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
11	Material Type: Article	Frequency-Domain Thermal Modeling and Characterization of Power Semiconductor Devices IEEE transactions on power electronics, 2016-10, Vol.31 (10), p.7183-7193 [Peer Reviewed Journal] ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2015.2509506 ;CODEN: ITPEE8 Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
12	Material Type: Article	Ultralow contact resistance between semimetal and monolayer semiconductors Nature (London), 2021-05, Vol.593 (7858), p.211-217 [Peer Reviewed Journal] COPYRIGHT 2021 Nature Publishing Group ;Copyright Nature Publishing Group May 13, 2021 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03472-9 ;PMID: 33981050 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
13	Material Type: Article	Promises and prospects of two-dimensional transistors Nature (London), 2021-03, Vol.591 (7848), p.43-53 [Peer Reviewed Journal] Copyright Nature Publishing Group Mar 4, 2021 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03339-z ;PMID: 33658691 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
14	Material Type: Article	Stability and Reliability of Lateral GaN Power Field-Effect Transistors IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590 [Peer Reviewed Journal] ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2019.2931718 ;CODEN: IETDAI Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
15	Material Type: Article	Langmuir probe electronics upgrade on the tokamak à configuration variable Review of scientific instruments, 2019-08, Vol.90 (8), p.083502-083502 [Peer Reviewed Journal] Author(s) ;2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). ;ISSN: 0034-6748 ;EISSN: 1089-7623 ;DOI: 10.1063/1.5108876 ;PMID: 31472647 ;CODEN: RSINAK Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
16	Material Type: Article	Near-Field Thermal Transistor Physical review letters, 2014-01, Vol.112 (4) [Peer Reviewed Journal] Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0031-9007 ;EISSN: 1079-7114 ;DOI: 10.1103/PhysRevLett.112.044301 Digital Resources/Online E-Resources View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
17	Material Type: Article	Enhanced n-type β-Ga2O3 ( 2 ¯ 01 ) gate stack performance using Al2O3/SiO2 bi-layer dielectric Applied physics letters, 2019-05, Vol.114 (21) [Peer Reviewed Journal] Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5089627 ;CODEN: APPLAB Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
18	Material Type: Article	Vertical architecture for enhancement mode power transistors based on GaN nanowires Applied physics letters, 2016-05, Vol.108 (21) [Peer Reviewed Journal] Author(s) ;2016 Author(s). Published by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4952715 ;CODEN: APPLAB Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
19	Material Type: Article	Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor Applied physics letters, 2017-07, Vol.111 (2) [Peer Reviewed Journal] Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4993569 ;CODEN: APPLAB Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by
20	Material Type: Article	WSe2 field effect transistors with enhanced ambipolar characteristics Applied physics letters, 2013-09, Vol.103 (10) [Peer Reviewed Journal] ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4820408 Full text available View Online Details Recommendations Reviews Times Cited External Links Citations Cited by

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Results 1 - 20 of 5,649,293 for All Library Resources

ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2017.2730260 ;CODEN: ITPEE8

Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2011.2178433

ISSN: 0018-9219 ;EISSN: 1558-2256 ;DOI: 10.1109/JPROC.2014.2332291 ;CODEN: IEEPAD

Copyright Nature Publishing Group Jun 2018 ;ISSN: 1748-3387 ;EISSN: 1748-3395 ;DOI: 10.1038/s41565-018-0136-9 ;PMID: 29789635

Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5092433 ;CODEN: APPLAB

Copyright Nature Publishing Group Mar 10, 2022 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-04323-3

ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2019.2960573 ;CODEN: IETDAI

ISSN: 0733-8724 ;ISSN: 1558-2213 ;EISSN: 1558-2213 ;DOI: 10.1109/JLT.2022.3207010 ;CODEN: JLTEDG

Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5092684 ;CODEN: APPLAB

ISSN: 0885-8993 ;EISSN: 1941-0107 ;DOI: 10.1109/TPEL.2015.2509506 ;CODEN: ITPEE8

COPYRIGHT 2021 Nature Publishing Group ;Copyright Nature Publishing Group May 13, 2021 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03472-9 ;PMID: 33981050

Copyright Nature Publishing Group Mar 4, 2021 ;ISSN: 0028-0836 ;EISSN: 1476-4687 ;DOI: 10.1038/s41586-021-03339-z ;PMID: 33658691

ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2019.2931718 ;CODEN: IETDAI

Author(s) ;2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). ;ISSN: 0034-6748 ;EISSN: 1089-7623 ;DOI: 10.1063/1.5108876 ;PMID: 31472647 ;CODEN: RSINAK

Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 0031-9007 ;EISSN: 1079-7114 ;DOI: 10.1103/PhysRevLett.112.044301

Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5089627 ;CODEN: APPLAB

Author(s) ;2016 Author(s). Published by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4952715 ;CODEN: APPLAB

Author(s) ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4993569 ;CODEN: APPLAB

ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4820408

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