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Material Type: Article
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Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiCIEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6216-6221 [Peer Reviewed Journal]ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2021.3117535 ;CODEN: IETDAIDigital Resources/Online E-Resources |
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2 |
Material Type: Article
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Output Characteristics of Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiCIEEE access, 2022, Vol.10, p.109558-109564 [Peer Reviewed Journal]Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022 ;ISSN: 2169-3536 ;EISSN: 2169-3536 ;DOI: 10.1109/ACCESS.2022.3214654 ;CODEN: IAECCGFull text available |
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3 |
Material Type: Article
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Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor SwitchApplied sciences, 2019-01, Vol.9 (2), p.358 [Peer Reviewed Journal]2019. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 2076-3417 ;EISSN: 2076-3417 ;DOI: 10.3390/app9020358Full text available |