skip to main content
Language:
Search Limited to: Search Limited to: Resource type Show Results with: Show Results with: Search type Index

High-responsivity photodetectors made of graphene nanowalls grown on Si

Applied physics letters, 2019-08, Vol.115 (8) [Peer Reviewed Journal]

Author(s) ;2019 Author(s). Published under license by AIP Publishing. ;ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.5097313 ;CODEN: APPLAB

Full text available

Citations Cited by
  • Title:
    High-responsivity photodetectors made of graphene nanowalls grown on Si
  • Author: Li, Longfei ; Dong, Yibo ; Guo, Weiling ; Qian, Fengsong ; Xiong, Fangzhu ; Fu, Yafei ; Du, Zaifa ; Xu, Chen ; Sun, Jie
  • Subjects: Bias ; Graphene ; Illumination ; Infrared lasers ; Infrared radiation ; Light ; Optoelectronics ; Organic chemistry ; Photometers ; Plasma enhanced chemical vapor deposition ; Silicon substrates
  • Is Part Of: Applied physics letters, 2019-08, Vol.115 (8)
  • Description: Graphene nanowalls (GNWs) are wall-like graphene nanosheets that are oriented vertically on a substrate. GNWs have a unique structure and special optoelectronic properties, which enables their use in photodetectors. In this paper, we use plasma-enhanced chemical vapor deposition to directly grow GNWs onto the surface of an n-type lightly doped Si substrate and to optimize the quality of the GNWs by adjusting the growth time and temperature. Furthermore, after the GNWs are lithographically patterned, we use a GNW-Si Schottky structure to develop photodetector arrays which are capable of detecting light from the visible to infrared light spectral range. Throughout the process, GNWs are directly synthesized on a Si substrate without using a catalyst or a transfer step. The process is simple and efficient. Under laser illumination at a wavelength of 792 nm, the highest on/off ratio at zero bias is approximately 105, and the specific detectivity is 7.85 × 106 cm Hz1/2/W. Under a reverse bias of 4 V, the measured responsivity of the detector reaches 1 A/W at room temperature. The device can also produce a light response in the near-infrared band. Upon laser illumination at a wavelength of 1550 nm, the detector shows a responsivity of 12 mA/W at room temperature.
  • Publisher: Melville: American Institute of Physics
  • Language: English
  • Identifier: ISSN: 0003-6951
    EISSN: 1077-3118
    DOI: 10.1063/1.5097313
    CODEN: APPLAB
  • Source: Alma/SFX Local Collection
Back to results list
INSPIRE LIBRARY - TON DUC THANG UNIVERSITY (84-028) 37 755 057 Feedback
19 Nguyen Huu Tho St. Dist.7, HCM thuvien@tdtu.edu.vn

Copyright © 2017 INSPIRE LIBRARY - TON DUC THANG UNIVERSITY

Searching Remote Databases, Please Wait