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High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

Metals and materials international, 2018-05, Vol.24 (3), p.652-656 [Peer Reviewed Journal]

COPYRIGHT(C) KYOBO BOOK CENTRE ALL RIGHTS RESERVED ;The Korean Institute of Metals and Materials 2018 ;Metals and Materials International is a copyright of Springer, (2018). All Rights Reserved. ;ISSN: 1598-9623 ;EISSN: 2005-4149 ;DOI: 10.1007/s12540-018-0045-3

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Title:
High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation
Author: Woo, Whang Je ; Nam, Taewook ; Oh, Il-Kwon ; Maeng, Wanjoo ; Kim, Hyungjun
Subjects: Barrier layers ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Diffusion barriers ; Diffusion layers ; Electrical properties ; Engineering Thermodynamics ; Heat and Mass Transfer ; Machines ; Magnetic Materials ; Magnetism ; Manufacturing ; Materials Science ; Metallic Materials ; Processes ; Semiconductor devices ; Solid Mechanics ; Synthesis ; Thin film transistors
Is Part Of: Metals and materials international, 2018-05, Vol.24 (3), p.652-656
Description: The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.
Publisher: Seoul: 대한금속·재료학회
Language: Korean;English
Identifier: ISSN: 1598-9623
EISSN: 2005-4149
DOI: 10.1007/s12540-018-0045-3
Source: ProQuest Central

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High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

COPYRIGHT(C) KYOBO BOOK CENTRE ALL RIGHTS RESERVED ;The Korean Institute of Metals and Materials 2018 ;Metals and Materials International is a copyright of Springer, (2018). All Rights Reserved. ;ISSN: 1598-9623 ;EISSN: 2005-4149 ;DOI: 10.1007/s12540-018-0045-3

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