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Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6216-6221 [Peer Reviewed Journal]

ISSN: 0018-9383 ;EISSN: 1557-9646 ;DOI: 10.1109/TED.2021.3117535 ;CODEN: IETDAI

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  • Title:
    Side-Illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC
  • Author: Choi, Pyeung Hwi ; Kim, Yong Pyo ; Kim, Min-Seong ; Ryu, Jiheon ; Baek, Sung-Hyun ; Hong, Sung-Min ; Lee, Sungbae ; Jang, Jae-Hyung
  • Subjects: Electrodes ; Frontside illumination backside illumination ; high purity semi-insulating (HPSI) 4H-silicon carbide (SiC) ; Laser beams ; Lighting ; Optical device fabrication ; Optical pulses ; Optical switches ; photoconductive semiconductor switches (PCSSs) ; side illumination ; Substrates
  • Is Part Of: IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6216-6221
  • Description: High purity semi-insulating (HPSI) 4H-silicon carbide (SiC) was used to fabricate lateral and vertical photoconductive semiconductor switches (PCSSs). The lateral PCSSs were illuminated from the frontside (fPCSS) or the backside (bPCSS). The side-illuminated vertical PCSS (vPCSS) was designed to increase the light-matter interaction volume. A 532-nm pulsed laser with adjustable energy was utilized to excite the PCSSs. The turn-on time was found to be highly dependent on the optical illumination energy, and the full-width at half-maximum of the PCSSs output waveforms was related to the peak output voltage. The output electrical pulse from the vPCSS exhibited a shorter turn-on time and a larger pulsewidth than the two types of lateral PCSSs. The vPCSS outperformed the fPCSS and bPCSS in terms of minimum \mathrm{\scriptscriptstyle ON} -state resistance and output pulse amplitude under the same optical illumination energy. The vPCSS, which utilizes a large effective contact area to collect photogenerated carriers, also had higher photon absorption efficiency by arranging the optical path at a right angle to the carrier transport. The vPCSS exhibited a minimum \mathrm{\scriptscriptstyle ON} -state resistance of 0.34 \Omega at optical illumination energy of 8 mJ.
  • Publisher: IEEE
  • Language: English
  • Identifier: ISSN: 0018-9383
    EISSN: 1557-9646
    DOI: 10.1109/TED.2021.3117535
    CODEN: IETDAI
  • Source: IEEE Xplore Open Access Journals
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