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Growth of single crystals of Cd xHg 1− xTe by casting perpendicular to the ampoule axis: A temperature gradient recrystallize-anneal technique

Journal of crystal growth, 1985, Vol.73 (3), p.537-542 [Peer Reviewed Journal]

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Title:
Growth of single crystals of Cd xHg 1− xTe by casting perpendicular to the ampoule axis: A temperature gradient recrystallize-anneal technique
Author: Van Khai, Nguyen ; Nowak, Zenon ; Piotrowski, Jósef
Is Part Of: Journal of crystal growth, 1985, Vol.73 (3), p.537-542
Description: A modification of the cast-recrystallize-anneal (CRA) technique is proposed. The recrystallization stage of the CRA process is performed using a high temperature gradient (10–100 K/cm), perpendicular to the ampoule axis. The modification makes it possible to lower the recrystallization temperature to ≈ 750 K and to shorten the recrystallization time. The strong temperature gradient during recrystallization removes excess Hg or Te from the crystals, rejected them to the highest temperature part of the ingot. The temperature gradient determines the orientation of the crystal. By temperature gradient annealing at low temperatures the concentration of tellurium precipitates can be reduced. An additional purification of the material is expected as a result of temperature gradient zone melting in the case of high Te excess charges.
Publisher: Elsevier B.V
Language: English
Identifier: ISSN: 0022-0248
EISSN: 1873-5002
DOI: 10.1016/0022-0248(85)90018-1
Source: Alma/SFX Local Collection

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