skip to main content
Guest
My Research
My Account
Sign out
Sign in
This feature requires javascript
Library Search
Find Databases
Browse Search
E-Journals A-Z
E-Books A-Z
Citation Linker
Help
Language:
English
Vietnamese
This feature required javascript
This feature requires javascript
Primo Search
All Library Resources
All
Course Materials
Course Materials
Search For:
Clear Search Box
Search in:
All Library Resources
Or hit Enter to replace search target
Or select another collection:
Search in:
All Library Resources
Search in:
Print Resources
Search in:
Digital Resources
Search in:
Online E-Resources
Advanced Search
Browse Search
This feature requires javascript
Search Limited to:
Search Limited to:
Resource type
criteria input
All items
Books
Articles
Images
Audio Visual
Maps
Graduate theses
Show Results with:
criteria input
that contain my query words
with my exact phrase
starts with
Show Results with:
Search type Index
criteria input
anywhere in the record
in the title
as author/creator
in subject
Full Text
ISBN
ISSN
TOC
Keyword
Field
Show Results with:
in the title
Show Results with:
anywhere in the record
in the title
as author/creator
in subject
Full Text
ISBN
ISSN
TOC
Keyword
Field
This feature requires javascript
Understanding the Fundamental Properties of Transfer-Free, Wafer-Level Graphene on Silicon and its Potential for Micro- and Nanodevices
Approved for public release; distribution is unlimited.
Digital Resources/Online E-Resources
Citations
Cited by
View Online
Details
Recommendations
Reviews
Times Cited
External Links
This feature requires javascript
Actions
Add to My Research
Remove from My Research
E-mail
Print
Permalink
Citation
EasyBib
EndNote
RefWorks
Delicious
Export RIS
Export BibTeX
This feature requires javascript
Title:
Understanding the Fundamental Properties of Transfer-Free, Wafer-Level Graphene on Silicon and its Potential for Micro- and Nanodevices
Author:
Iacopi, Francesca
Subjects:
ADHESION
;
ELECTRONIC MATERIALS
;
ELECTRONICS
;
GRAPHENE
;
Inorganic Chemistry
;
MECHANICAL PROPERTIES
;
PE61102F
;
PROCESSING
;
SILICON
Description:
The absence of a band-gap and the lack of an adequate synthesis method of high quality graphene on silicon substrates have held back the applications of graphene in electronics and integrated micro- and nano-systems. This research pioneers a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from hetero-epitaxial SiC films. Using a Ni/Cu catalytic alloy high-quality, uniform bilayer graphene directly was realized on silicon wafers, at temperatures compatible with conventional semiconductor processing. The highest ever reported doping for graphene (approx. 1015/cm2), which also corresponded to record low sheet resistance was observed using this process. The p-type metal sheet is grown in-situ on silicon substrates, with processes fully compatible with semiconductor industry and its conduction is unmatched by any classical metal of only 1 nm thickness. This densely intercalated graphene bilayer offers both electrical and mechanical (adhesion) reliability, largely overlooked so far but both essential to qualify for any use in nanodevices. The extremely high doping may open a new area of basic physics investigation. The research illustrates how exceptional properties of the catalytic graphene on silicon substrates can advance a wide spectrum of practical applications ranging from efficient metal replacement at the nanoscale for MEMS/NEMS to miniaturized devices for on-chip energy storage.
Creation Date:
2015
Language:
English
Source:
DTIC Technical Reports
This feature requires javascript
This feature requires javascript
Back to results list
This feature requires javascript
This feature requires javascript
Searching Remote Databases, Please Wait
Searching for
in
scope:(TDTS),scope:(SFX),scope:(TDT),scope:(SEN),primo_central_multiple_fe
Show me what you have so far
This feature requires javascript
This feature requires javascript