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X-band monolithic three-stage LNA with GaAs E-mode PHEMT

Journal of physics. Conference series, 2021-07, Vol.1971 (1), p.12004 [Peer Reviewed Journal]

Published under licence by IOP Publishing Ltd ;2021. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 1742-6588 ;EISSN: 1742-6596 ;DOI: 10.1088/1742-6596/1971/1/012004

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  • Title:
    X-band monolithic three-stage LNA with GaAs E-mode PHEMT
  • Author: Zuo, Zhengxing ; Sun, Shufeng
  • Subjects: Amplifiers ; Electric potential ; Frequency ranges ; Noise factor ; Superhigh frequencies ; Voltage
  • Is Part Of: Journal of physics. Conference series, 2021-07, Vol.1971 (1), p.12004
  • Description: Abstract An LNA for 8∼12 GHz is proposed in this paper. The amplifier uses a GaAs process with cost-effective, E-mode HEMTs with gate widths of 0.25 µm and 0.45 µm. The three stages of the LNA are powered by dual power supplies, with a drain operating voltage of +3V and a gate operating voltage of +0.7V. The simulation results of the schematic diagram show that the noise factor of the low-noise amplifier is less than 2.5dB in the frequency range of 8-12GHz, the in-band gain is greater than 30dB, the gain flatness is ±1.5dB, the 1dB compression point is 7dbm, the VSWRs are less than -10dB, and the LNA is absolutely stable in the X-band.
  • Publisher: Bristol: IOP Publishing
  • Language: English
  • Identifier: ISSN: 1742-6588
    EISSN: 1742-6596
    DOI: 10.1088/1742-6596/1971/1/012004
  • Source: IOP Publishing Free Content
    IOPscience (Open Access)
    GFMER Free Medical Journals
    ProQuest Central

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