Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Applied physics letters, 2013-09, Vol.103 (12) [Peer Reviewed Journal]ISSN: 0003-6951 ;EISSN: 1077-3118 ;DOI: 10.1063/1.4821858
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