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High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Materials, 2017-06, Vol.10 (7), p.702 [Peer Reviewed Journal]

2017 by the authors. 2017 ;ISSN: 1996-1944 ;EISSN: 1996-1944 ;DOI: 10.3390/ma10070702 ;PMID: 28773058

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  • Title:
    High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
  • Author: Noviyana, Imas ; Lestari, Annisa Dwi ; Putri, Maryane ; Won, Mi-Sook ; Bae, Jong-Seong ; Heo, Young-Woo ; Lee, Hee Young
  • Subjects: amorphous oxide ; high field effect mobility ; indium zinc tin oxide ; RF magnetron sputtering ; thin film transistor
  • Is Part Of: Materials, 2017-06, Vol.10 (7), p.702
  • Description: Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In2O3:ZnO:SnO2 = 2:5:1. Annealing treatment was carried out for as-deposited films at various temperatures to investigate its effect on TFT performances. It was found that annealing treatment at 350 °C for 30 min in air atmosphere yielded the best result, with the high field effect mobility value of 34 cm2/Vs and the minimum subthreshold swing value of 0.12 V/dec. All IZTO thin films were amorphous, even after annealing treatment of up to 350 °C.
  • Publisher: Switzerland: MDPI
  • Language: English
  • Identifier: ISSN: 1996-1944
    EISSN: 1996-1944
    DOI: 10.3390/ma10070702
    PMID: 28773058
  • Source: GFMER Free Medical Journals
    PubMed Central
    ROAD: Directory of Open Access Scholarly Resources
    ProQuest Central
    DOAJ Directory of Open Access Journals

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