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Tratamiento superficial de silicio
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Title:
Tratamiento superficial de silicio
Author:
KROL, Andrew
;
LONG, Ernest
;
CASTALDI, Steven
;
LETIZE, Adam
Subjects:
BASIC ELECTRIC ELEMENTS
;
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
;
ELECTRICITY
;
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
;
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
;
REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION
;
SEMICONDUCTOR DEVICES
;
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
;
TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
Description:
Un método de formación de un patrón de conductor sobre un sustrato semiconductor de silicio que tiene una capa anti-reflectante de nitruro de silicio sobre el mismo, comprendiendo el método las etapas de: (a) modificar la energía superficial de la capa anti-reflectante por medio de contacto de la capa anti-reflectante con una composición que comprende un tensioactivo que contiene flúor, donde el tensioactivo que contiene flúor está seleccionado entre el grupo que consiste en ácido perfluoroalquil sulfónico y sales del mismo, fosfatos de perfluoroalquilo, aminas de perfluoroalquilo, óxidos de perfluoroalquilo y sulfonatos de perfluoroalquilo; (b) aplicar una estructura resistente al ataque químico a la capa anti-reflectante tratada formada en la etapa (a) creando de este modo áreas expuestas de la capa anti-reflectante y áreas cubiertas con la estructura resistente de la capa anti-reflectante; (c) poner en contacto las áreas expuestas de la capa anti-reflectante formada a partir de la etapa (b) con una composición de agente de ataque químico para retirar la capa anti-reflectante de las áreas expuestas, creando de este modo áreas expuestas de sustrato de semiconductor de silicio; (d) aplicar un revestimiento metálico sobre las áreas expuestas del sustrato de semiconductor de silicio; y (e) separar la estructura resistente de ataque químico, donde la etapa (e) se lleva a cabo entre las etapas (c) y (d), o después de la etapa (d). A method of forming a resist pattern on a silicon semiconductor substrate having an anti-reflective layer thereon is described. The method includes the steps of a) modifying surface energy of the anti-reflective surface with a chemical treatment composition, b) applying a UV etch resist to the treated anti-reflective surface, and c) exposing the anti-reflective surface to a wet chemical etchant composition to remove exposed areas of the anti-reflective surface. Thereafter, the substrate can be metallized to provide a conductor pattern. The method may be used to produce silicon solar cells.
Creation Date:
2019
Language:
Spanish
Source:
esp@cenet
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