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Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

Nature nanotechnology, 2015-05, Vol.10 (5), p.403-406 [Peer Reviewed Journal]

Copyright Nature Publishing Group May 2015 ;ISSN: 1748-3387 ;EISSN: 1748-3395 ;DOI: 10.1038/NNANO.2015.56 ;PMID: 25849785

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  • Title:
    Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
  • Author: Sangwan, Vinod K ; Jariwala, Deep ; Kim, In Soo ; Chen, Kan-Sheng ; Marks, Tobin J ; Lauhon, Lincoln J ; Hersam, Mark C
  • Is Part Of: Nature nanotechnology, 2015-05, Vol.10 (5), p.403-406
  • Description: Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
  • Publisher: England: Nature Publishing Group
  • Language: English
  • Identifier: ISSN: 1748-3387
    EISSN: 1748-3395
    DOI: 10.1038/NNANO.2015.56
    PMID: 25849785
  • Source: ProQuest Central
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