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Overview of emerging nonvolatile memory technologies

Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526 [Peer Reviewed Journal]

Meena et al.; licensee Springer. 2014. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. ;The Author(s) 2014 ;Copyright © 2014 Meena et al.; licensee Springer. 2014 Meena et al.; licensee Springer. ;ISSN: 1931-7573 ;ISSN: 1556-276X ;EISSN: 1556-276X ;DOI: 10.1186/1556-276X-9-526 ;PMID: 25278820

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  • Title:
    Overview of emerging nonvolatile memory technologies
  • Author: Meena, Jagan Singh ; Sze, Simon Min ; Chand, Umesh ; Tseng, Tseung-Yuen
  • Subjects: Chemistry and Materials Science ; Materials Science ; Molecular Medicine ; Nano Review ; Nanochemistry ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering
  • Is Part Of: Nanoscale research letters, 2014-09, Vol.9 (1), p.526-526, Article 526
  • Description: Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.
  • Publisher: New York: Springer New York
  • Language: English
  • Identifier: ISSN: 1931-7573
    ISSN: 1556-276X
    EISSN: 1556-276X
    DOI: 10.1186/1556-276X-9-526
    PMID: 25278820
  • Source: PubMed Central (Open access)
    Geneva Foundation Free Medical Journals at publisher websites
    AUTh Library subscriptions: ProQuest Central
    Alma/SFX Local Collection
    Springer OA刊
    DOAJ Directory of Open Access Journals
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