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Multilayer WS2 for low-power visible and near-infrared phototransistors

Discover nano, 2024-03, Vol.19 (1), p.57-57 [Peer Reviewed Journal]

The Author(s) 2024 ;The Author(s) 2024. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. ;ISSN: 1931-7573 ;EISSN: 2731-9229 ;EISSN: 1556-276X ;DOI: 10.1186/s11671-024-04000-0

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Title:
Multilayer WS2 for low-power visible and near-infrared phototransistors
Author: Pelella, Aniello ; Intonti, Kimberly ; Durante, Ofelia ; Kumar, Arun ; Viscardi, Loredana ; De Stefano, Sebastiano ; Romano, Paola ; Giubileo, Filippo ; Neill, Hazel ; Patil, Vilas ; Ansari, Lida ; Roycroft, Brendan ; Hurley, Paul K. ; Gity, Farzan ; Di Bartolomeo, Antonio
Subjects: Chemistry and Materials Science ; Diodes ; Electric contacts ; Electrical properties ; Electrons ; Field effect transistors ; I.R. radiation ; Lasers ; Materials Science ; Molecular Medicine ; Multilayers ; Nanochemistry ; Nanoscale Science and Technology ; Nanotechnology ; Nanotechnology and Microengineering ; Near infrared radiation ; Photoresponse ; Phototransistors ; Power management ; Semiconductor devices ; Temperature ; Transistors
Is Part Of: Discover nano, 2024-03, Vol.19 (1), p.57-57
Description: Mechanically exfoliated multilayer WS 2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS 2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
Publisher: New York: Springer US
Language: English
Identifier: ISSN: 1931-7573
EISSN: 2731-9229
EISSN: 1556-276X
DOI: 10.1186/s11671-024-04000-0
Source: Geneva Foundation Free Medical Journals at publisher websites
PubMed Central
Directory of Open Access Journals
Alma/SFX Local Collection
Springer OA刊
ProQuest Central

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Multilayer WS2 for low-power visible and near-infrared phototransistors

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