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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487 [Peer Reviewed Journal]

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Title:
0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects
Author: Nguyen, Nga T. H. ; Ukaegbu, Ikechi Augustine ; Sangirov, Jamshid ; Cho, Mu Hee ; Lee, Tae Woo ; Park, Hyo Hoon
Subjects: BER ; low cost ; noise ; optical interconnection ; sensitivity
Is Part Of: Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487
Description: ABSTRACT A transimpedance amplifier (TIA) has been designed and implemented for short‐reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 μm CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dBΩ and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm2 with a power dissipation of 4.3 mW. The proposed TIA achieved high gain‐bandwidth product per DC power (GBP/DC) figure of merit of 589 GHzΩ/mW with an input referred noise of 20 pA/√Hz. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2484–2487, 2013
Publisher: New York: Blackwell Publishing Ltd
Language: English
Identifier: ISSN: 0895-2477
EISSN: 1098-2760
DOI: 10.1002/mop.27886
CODEN: MOTLEO
Source: Alma/SFX Local Collection

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