(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVD
Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Peer Reviewed Journal]2001 Elsevier Science B.V. ;2001 INIST-CNRS ;ISSN: 0022-0248 ;EISSN: 1873-5002 ;DOI: 10.1016/S0022-0248(01)01443-9 ;CODEN: JCRGAE
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