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Picosecond photoresponse in van der Waals heterostructures

Nature nanotechnology, 2016-01, Vol.11 (1), p.42-46 [Peer Reviewed Journal]

Copyright Nature Publishing Group Jan 2016 ;Distributed under a Creative Commons Attribution 4.0 International License ;ISSN: 1748-3387 ;EISSN: 1748-3395 ;DOI: 10.1038/nnano.2015.227 ;PMID: 26436565

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  • Title:
    Picosecond photoresponse in van der Waals heterostructures
  • Author: Massicotte, M ; Schmidt, P ; Vialla, F ; Schädler, K G ; Reserbat-Plantey, A ; Watanabe, K ; Taniguchi, T ; Tielrooij, K J ; Koppens, F H L
  • Subjects: Assembling ; Carriers ; Condensed Matter ; Devices ; Graphene ; Heterostructures ; Optoelectronic devices ; Optoelectronics ; Physics ; Two dimensional
  • Is Part Of: Nature nanotechnology, 2016-01, Vol.11 (1), p.42-46
  • Description: Two-dimensional crystals such as graphene and transition-metal dichalcogenides demonstrate a range of unique and complementary optoelectronic properties. Assembling different two-dimensional materials in vertical heterostructures enables the combination of these properties in one device, thus creating multifunctional optoelectronic systems with superior performance. Here, we demonstrate that graphene/WSe2/graphene heterostructures ally the high photodetection efficiency of transition-metal dichalcogenides with a picosecond photoresponse comparable to that of graphene, thereby optimizing both speed and efficiency in a single photodetector. We follow the extraction of photoexcited carriers in these devices using time-resolved photocurrent measurements and demonstrate a photoresponse time as short as 5.5 ps, which we tune by applying a bias and by varying the transition-metal dichalcogenide layer thickness. Our study provides direct insight into the physical processes governing the detection speed and quantum efficiency of these van der Waals heterostuctures, such as out-of-plane carrier drift and recombination. The observation and understanding of ultrafast and efficient photodetection demonstrate the potential of hybrid transition-metal dichalcogenide-based heterostructures as a platform for future optoelectronic devices.
  • Publisher: England: Nature Publishing Group
  • Language: English
  • Identifier: ISSN: 1748-3387
    EISSN: 1748-3395
    DOI: 10.1038/nnano.2015.227
    PMID: 26436565
  • Source: Hyper Article en Ligne (HAL) (Open Access)
    ProQuest Central
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