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Tutorial: Organic field-effect transistors: Materials, structure and operation
Journal of applied physics, 2018-08, Vol.124 (7)
[Peer Reviewed Journal]
Author(s) ;ISSN: 0021-8979 ;EISSN: 1089-7550 ;DOI: 10.1063/1.5042255 ;CODEN: JAPIAU
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Title:
Tutorial: Organic field-effect transistors: Materials, structure and operation
Author:
Lamport, Zachary A.
;
Haneef, Hamna F.
;
Anand, Sajant
;
Waldrip, Matthew
;
Jurchescu, Oana D.
Subjects:
Charge materials
;
Charge transport
;
Contact resistance
;
Electric contacts
;
Electronic devices
;
Field effect transistors
;
Optoelectronic devices
;
Organic chemistry
;
Organic semiconductors
;
Parameters
;
Semiconductor devices
;
Structural analysis
Is Part Of:
Journal of applied physics, 2018-08, Vol.124 (7)
Description:
Chemical versatility and compatibility with a vast array of processing techniques has led to the incorporation of organic semiconductors in various electronic and opto-electronic devices. One such device is the organic field-effect transistor (OFET). In this tutorial, we describe the structure, operation, and characterization of OFETs. Following a short historical perspective, we introduce the architectures possible for OFETs and then describe the device physics and the methods for extracting relevant device parameters. We then provide a brief overview of the myriad organic semiconductors and deposition methods that were adopted for OFETs in the past decades. Non-ideal device characteristics, including contact resistance, are then discussed along with their effects on electrical performance and on the accuracy of extracting device parameters. Finally, we highlight several measurements involving OFETs that allow access to fundamental properties of organic semiconductors and the mechanism of charge transport in these materials.
Publisher:
Melville: American Institute of Physics
Language:
English
Identifier:
ISSN: 0021-8979
EISSN: 1089-7550
DOI: 10.1063/1.5042255
CODEN: JAPIAU
Source:
Alma/SFX Local Collection
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