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Imaging the in-plane distribution of helium precipitates at a Cu/V interface

Materials Research Letters, 2017, Vol.5 (5), p.335-342

2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. 2017 ;EISSN: 2166-3831 ;DOI: 10.1080/21663831.2017.1287132

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  • Title:
    Imaging the in-plane distribution of helium precipitates at a Cu/V interface
  • Author: Chen, Di ; Li, Nan ; Yuryev, Dina ; Wen, Juan ; Baldwin, Kevin ; Demkowicz, Michael J. ; Wang, Yongqiang
  • Subjects: Helium precipitates ; interfaces ; ion implantation ; metal nanocomposites ; physical vapor deposition
  • Is Part Of: Materials Research Letters, 2017, Vol.5 (5), p.335-342
  • Description: We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along ⟨110⟩-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations. IMPACT STATEMENT The innovation of this paper is providing the first plane-view experimental images of in-plane helium precipitate distributions at an interface between physical vapor deposited face-centered cubic (fcc) and body-centered cubic (bcc) metals.
  • Publisher: Taylor & Francis
  • Language: English
  • Identifier: EISSN: 2166-3831
    DOI: 10.1080/21663831.2017.1287132
  • Source: Taylor & Francis Open Access
    DOAJ Directory of Open Access Journals

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