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Imaging the in-plane distribution of helium precipitates at a Cu/V interface
Materials Research Letters, 2017, Vol.5 (5), p.335-342
2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group. 2017 ;EISSN: 2166-3831 ;DOI: 10.1080/21663831.2017.1287132
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Title:
Imaging the in-plane distribution of helium precipitates at a Cu/V interface
Author:
Chen, Di
;
Li, Nan
;
Yuryev, Dina
;
Wen, Juan
;
Baldwin, Kevin
;
Demkowicz, Michael J.
;
Wang, Yongqiang
Subjects:
Helium precipitates
;
interfaces
;
ion implantation
;
metal nanocomposites
;
physical vapor deposition
Is Part Of:
Materials Research Letters, 2017, Vol.5 (5), p.335-342
Description:
We describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along ⟨110⟩-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations. IMPACT STATEMENT The innovation of this
paper
is providing the first plane-view experimental images of in-plane helium precipitate distributions at an interface between physical vapor deposited face-centered cubic (fcc) and body-centered cubic (bcc) metals.
Publisher:
Taylor & Francis
Language:
English
Identifier:
EISSN: 2166-3831
DOI: 10.1080/21663831.2017.1287132
Source:
Taylor & Francis Open Access
DOAJ Directory of Open Access Journals
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